Abstract:Presently Si-based field-effect transistors (FET) are approaching their physical limit and challenging Moore's law for their short-channel effect, and further scaling their gate length down to the sub-10 nm region is becoming extremely difficult. Two-dimensional (2D) layered semiconductors with atom-scale uniform thicknesses and absence of dangling bonds on the interface are considered as potential channel materials to support further miniaturization and integrated electronics. Wu F, et al. (2022 Nature 603 259) have successfully fabricated a FET with gate lengths below 1 nm using atomically thin molybdenum disulfide with exceptional device performance. This breakthrough has greatly encouraged further theoretical predictions regarding the performance of 2D devices. Additionally, 2D SnS exhibits high carrier mobility, anisotropic electronic properties, and stabilized in ambient condition conducive to advanced applications in 2D semiconductor technology. Herein, we explore the quantum transport properties of sub-5 nm monolayer (ML) SnS FET using first-principles quantum transport simulation. Considering the anisotropic electronic SnS, the double-gated-two-probe device model is constructed along the armchair and zigzag directions of ML SnS. After test five kinds of doping concentrations, a doping concentration of 5×10 13 cm -2 is the best one for SnS FET. We also used the underlap (UL) with range of 0, 2, and 4 nm to improve the device performance. On-state current ( I on ) is an important parameter for evaluating the transition speed of a logic device. A higher I on of a device can help to increase the switching speed of high-performance (HP) servers. The main conclusions are as follows. 1) I on of the n-type 2 nm (UL=4 armchair), 3 nm (UL=2), 4 nm (UL=3), 5 nm (UL=0) and the p-type 1 nm (UL=2 zigzag), 2 nm (UL=2 zigzag), 3 nm (UL=2,4 zigzag), 4 nm (UL=2,4 zigzag), and 5 nm (UL=0, armchair/zigzag) gate-length devices can meet the standards for HP applications for the next decade in the International Technology Roadmap for semiconductors (ITRS, 2013 version). 2) I on of the n-type device along the armchair direction (31-2369μA/μm) are larger than that in the zigzag direction (4.04-1943μA/μm), while p-type along the zigzag direction (545-4119μA/μm) are larger than that in the armchair direction (0.7-924μA/μm). Therefore, the p-type ML GeSe MOSFETs have a predominantly anisotropic current. 3) I on of the p-type 3 nm gate-length (UL=0) device along the zigzag direction has the highest valued 4119 μA/μm is 2.93 times larger than that in the same gate-length UL=2 (1407μA/μm). Hence, an overlong UL will weaken the performance of the device because the gate of the device cannot well control the UL region. Thus, a suitable length of UL for FET is very important. 4) Remarkably, I on of the p-type devices (zigzag), even at a 1 nm gate-length, can fulfill the requirements of HP applications for the next decade in the ITRS, with a value as high as 1934 μA/μm. To our knowledge, this is the best-performing device material reported at 1 nm gate length. 5) Subthreshold swing (SS) evaluates the control ability of the gate in the subthreshold region. The better the gate control, the smaller SS the device has. The limit of SS for traditional FETs is 60 mV/dec (at room temperature). Values of SS for ML SnS FET alone zigzag direction are less than those along the armchair direction because the leakage current is influenced by the effective mass.

Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2.

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Single Crystal Growth of Bulk SnS2 and High Yield Preparation of Few-Layer SnS2

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Electrical Transport Properties of Few-Layer SnS2 Field-effect Transistors

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

Vapor-Liquid-Solid Growth of Morphology-Tailorable WS2 Toward P-Type Monolayer Field-Effect Transistors

Sodium chloride-assisted CVD enables controlled synthesis of large single-layered MoS2

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

Controllable growth of SnS2 nanostructures on nanocarbon surfaces for lithium-ion and sodium-ion storage with high rate capability

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

High-performance Sub-5nm Monolayer Tin Sulfide (SnS) Field-effect Transistors: a First principles Study

Large-Scale Production and Optical Properties of a High-Quality SnS2 Single Crystal Grown Using the Chemical Vapor Transportation Method

Synthesis of Large-Scale Few-Layer PtS2 Films by Chemical Vapor Deposition

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Van der Waals Epitaxial Trilayer MoS<sub>2</sub> Crystals for High-Speed Electronics

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions