Abstract:Two-dimensional intrinsic ferromagnets with high Curie temperature and large perpendicular magnetic anisotropy (PMA) are promising candidates for data storage and spintronics applications. In this work, first-principle calculations and Monte Carlo simulation are used to investigate the stability, electronic structure, and magnetic anisotropy of monolayers of CrSeX (X = Cl, Br, I). It is found that monolayer CrSeX (X = Cl, Br, I) species are two-dimensional intrinsic ferromagnets and are thermally stable at room temperature. It is worth noting that the Curie temperatures of monolayer CrSeX (X = Cl, Br, I) can reach or even exceed room temperature, and a strong PMA can be obtained in monolayer CrSeI. Interestingly, the PMA of monolayer CrSeI is mainly provided by the nonmetallic I atom with large spin–orbit coupling and magnetic anisotropy of the nonmetallic I atom reaching up to 0.572 meV/I atom, which is comparable to that of metallic Fe atoms at Fe/MgO interfaces. In contrast to monolayer CrSeI, monolayer CrSeCl and CrSeBr possess weak in-plane magnetic anisotropy, and their easily magnetized direction is the [100] axis. By analyzing the projected density of states and the p-orbital-resolved magnetic anisotropy energy of the nonmetallic I atom based on second-order perturbation theory, we find that the large PMA of monolayer CrSeI is mainly provided by the matrix element difference between the spin-up px and py states of the nonmetallic I atoms, and the difference between it and the matrix element difference between the spin-up py and pz states of the nonmetallic I atoms in the case of the magnetic moment aligning [100] and [010] axes is the reason why the energy of monolayer CrSeI for the magnetic moment aligning [100] axis is smaller than the energy for the magnetic moment aligning [010] axis. This study suggests that monolayer CrSeI is a promising candidate for future applications in spintronic devices.

First-principles Study the Single-Layer Transition Metal Trihalide CrXSe3 (X = Sn, Ge, Si) As Monolayer Ferromagnetic Semiconductor.

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4monolayer.

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4 monolayer

Crsbs3 Monolayer: A Potential Phase Transition Ferromagnetic Semiconductor

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Exfoliating Biocompatible Ferromagnetic Cr-trihalide Monolayers.

Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

Layer-independent Ferromagnetic Insulators in a New Structural Phase of Cr2S3

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Strain-tunable ferromagnetism in 2D non-van-der-Waals CuCr2X4 (X = S, Se)

Prediction of interesting ferromagnetism in Janus semiconducting Cr$_2$AsP monolayer

Multiferroic Metallic Monolayer Cu(CrSe2)2

CrP2Se6 monolayer: Two-dimensional intrinsic ferromagnetic half-metal with large magnetic anisotropy and high Curie temperature

Room-temperature antiferromagnetic CrSe monolayer with tunable metal-insulator transition in ferroelectric heterostructures

Crxte3 (X = Si, Ge) Nanosheets: Two Dimensional Intrinsic Ferromagnetic Semiconductors

Cr3X4 (X = Se, Te) Monolayers As a New Platform to Realize Robust Spin Filters, Spin Diodes and Spin Valves.

Prediction of Novel 2D Intrinsic Ferromagnetic Materials with High Curie Temperature and Large Perpendicular Magnetic Anisotropy

First-principles study of two-dimensional half-metallic ferromagnetism in NiXCl (X = S and Se) monolayer

Room-temperature antiferromagnetic CrSe monolayer with tunable metal–insulator transition in ferroelectric heterostructures

The intrinsic ferromagnetic half-metals with high Curie temperature of tetragonal XCrS4 (X=Ti, Zr) monolayer

Ferroelectricity and multiferroicity in two-dimensional Sc 2 P 2 Se 6 and ScCrP 2 Se 6 monolayers.