Abstract:Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI3, Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X = Cl and Br) have attracted considerable attention due to their potential application in spintronics. Despite few experimental studies, theoretical studies reported that 2D chromium dichalcogenide (CrS2) materials show unique properties such as valley polarization, piezoelectric coupling, and phase dependent intrinsic magnetic properties. Here, we report for the first time the synthesis of 2D layered CrS2 flakes down to the monolayer via the chemical vapor deposition (CVD) method, its phase structures and electronic properties. We observed the 2H, 1T, and 1T' phases coexisting in CVD grown monolayer CrS2. The formation of 1T' phases from 1T phases is described by dimerization of metal atoms at room temperature according to our molecular dynamics studies. The coexistence of 1T and 1T' phases with 2H phases is referred to as the 1T and 1T' puddling phenomenon. We theoretically showed that the monolayer 2H-CrS2 is a direct bandgap semiconductor with a gap of approximately 0.95 eV predicted by the PBE functional, while the 1T- and 1T'-CrS2 are metallic and semi-metallic with approximately 10 meV gap, respectively. Furthermore, 2H CrS2 exhibits nonmagnetic semiconducting properties while for ferromagnetic spin configuration, the 1T and 1T' CrS2 show magnetic characteristics with 0.531μB and 2.206μB magnetic moment per Cr atom respectively, for ferromagnetic spin configuration as predicted from DFT+U calculation. Importantly, CrS2-based field-effect transistors exhibit a p-type behavior. Our study would stimulate further exploration of 2D layered CrS2 with astonishing properties and open up a whole new avenue for the urgent need for developing multifunctional 2D materials for nanoelectronics, valleytronics, and spintronics.

Crsbs3 Monolayer: A Potential Phase Transition Ferromagnetic Semiconductor

CrSbS 3 monolayer: a potential phase transition ferromagnetic semiconductor

Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Strain-tunable magnetic and electronic properties of monolayer CrI 3 .

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

Two-dimensional monolayer CrGaS3: A ferromagnetic semiconductor with high Curie temperature and tunable magnetic anisotropy

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4monolayer.

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4 monolayer

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Electric-field induced half-metal in monolayer CrSBr

Surface‐Sensitive Detection of Magnetic Phase Transition in Van Der Waals Magnet CrSBr

Electric-field induced half-metal in experimentally synthesized CrSBr monolayer

Calculated magnetic exchange interactions in the van der Waals layered magnet CrSBr

Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Switching of the Magnetic Anisotropy Via Strain in Two Dimensional Multiferroic Materials: CrSX (X = Cl, Br, I)

Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer