CrSbS 3 monolayer: a potential phase transition ferromagnetic semiconductor

Qingqing Feng,Xiangyang Li,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.1039/d1nr03640h

IF: 6.7

2021-01-01

Nanoscale

Abstract:We realized a potential phase transition ferromagnetic semiconductor in exfoliated CrSbS 3 monolayer.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Crsbs3 Monolayer: A Potential Phase Transition Ferromagnetic Semiconductor

Qingqing Feng,Xiangyang Li,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.1039/d1nr03640h

IF: 6.7

2021-01-01

Nanoscale

Abstract:Two dimensional intrinsic ferromagnetic semiconductors with controllable magnetic phase transition are highly desirable for spintronics. Nevertheless, reports on their successful experimental realization are still rare. Herein, based on first principles calculations, we propose to achieve such a functional material, namely CrSbS3 monolayer by exfoliating from its bulk crystal. Intrinsic CrSbS3 monolayer is a ferromagnetic half semiconductor with a moderate bandgap of 1.90 eV. It features an intriguing magnetic phase transition from ferromagnetic to antiferromagnetic when applying a small compressive strain (similar to 2%), making it ideal for fabricating strain-controlled magnetic switches or memories. In addition, the predicted strong anisotropic absorption of visible light and small effective masses make the CrSbS3 monolayer promising for optoelectronic applications.
Structural Phase Transition of Multilayer VSe2.

Dian Li,Xiong Wang,Chi-Ming Kan,Daliang He,Zejun Li,Qing Hao,Hongbo Zhao,Changzheng Wu,Chuanhong Jin,Xiaodong Cui

DOI: https://doi.org/10.1021/acsami.0c04449

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Vanadium diselenide (VSe2), a member of the transition metal dichalcogenides (TMDs) family, is emerging as a promising twodimensional (2D) candidate for the electronic and spintronic device with exotic properties including charge/spin density wave and ferromagnetism. The bulk crystal VSe2 exists in a crystallographic form of 1T-phase with metallic behavior. In this paper, we report a structural phase transition of multilayer VSe2 from 1T to 2H through annealing at 650 K, accompanying a metal-insulator transition. We observe that the 2H-phase is more thermodynamically favorable than the 1T-phase at 2D.
CrSbSe3: a Pseudo One-Dimensional Ferromagnetic Semiconductor

Guangyu Wang,Lu Liu,Ke Yang,Hua Wu

DOI: https://doi.org/10.1103/physrevmaterials.5.124412

IF: 3.98

2021-01-01

Physical Review Materials

Abstract:Low-dimensional magnetic materials have attracted much attention due to their novel properties and high potential for spintronic applications. In this work, we study the electronic structure and magnetic properties of the pseudo one-dimensional compound CrSbSe3, using density functional calculations, superexchange model analyses, and Monte Carlo simulations. We find that CrSbSe 3 is a ferromagnetic (FM) semiconductor with a band gap of about 0.65 eV. The FM couplings within each zigzag spin chain are due to the Cr-Se-Cr superexchange with the near 90 degrees bonds, and the interchain FM couplings are one order of magnitude weaker. By inclusion of the spin-orbit coupling (SOC) effects, our calculations reproduce the experimental observation of the easy magnetization a axis and the hard b axis (the spin-chain direction), with the calculated moderate magnetic anisotropy of 0.19 meV/Cr. Moreover, we identify the nearly equal contributions from the single ion anisotropy of Cr, and from the exchange anisotropy due to the strong SOC of the heavy elements Sb and Se and their couplings with Cr. Using the parameters of the magnetic coupling and anisotropy from the above calculations, our Monte Carlo simulations yield the Curie temperature T-C of 108 K.
Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Wanghua Hu,Jinbo Shen,Tao Wang,Zishun Li,Zhuokai Xu,Zhefeng Lou,Haoyu Qi,Junjie Yan,Jialu Wang,Tian Le,Xiaorui Zheng,Yunhao Lu,Xiao Lin

DOI: https://doi.org/10.1002/smtd.202400312

IF: 12.4

2024-01-01

Small Methods

Abstract:Gate-controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non-layered materials. The non-layered rhombohedral Cr2S3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS2 and 0D Cr1/3. Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined-standing grown 2D Cr2S3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all-dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr1/3 layers, as revealed by cross-sectional scanning transmission electron microscope, permitting the insertion of Li+ ions. An unprecedented metal-insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr2S3-based ionic field-effect transistors. Theoretical calculations corroborate the metallization induced by Li-ion intercalation. This work sheds light on the understanding of growth mechanism, structure-property correlation and highlights the diverse potential applications of 2D non-layered Cr2S3 superlattice.
Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Fangchao Long,Kseniia Mosina,René Hübner,Zdenek Sofer,Julian Klein,Slawomir Prucnal,Manfred Helm,Florian Dirnberger,Shengqiang Zhou

DOI: https://doi.org/10.1063/5.0175185

2023-09-09

Abstract:Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase diagram seemed to be well-understood. Recently, however, several groups observed a magnetic transition in magnetometry measurements at temperatures of around 40 K that is not expected from theoretical considerations, causing a debate about the intrinsic magnetic properties of the material. In this letter, we report the absence of this particular transition in magnetization measurements conducted on high-quality CrSBr crystals, attesting to the extrinsic nature of the low-temperature magnetic phase observed in other works. Our magnetometry results obtained from large bulk crystals are in very good agreement with the magnetic phase diagram of CrSBr previously predicted by the mean-field theory; A-type antiferromagnetic order is the only phase observed below the Néel temperature at TN = 131 K. Moreover, numerical fits based on the Curie-Weiss law confirm that strong ferromagnetic correlations are present within individual layers even at temperatures much larger than TN.

Materials Science
Calculated magnetic exchange interactions in the van der Waals layered magnet CrSBr

Xiangyan Bo,Feng Li,Xinyu Xu,Xiangang Wan,Yong Pu

DOI: https://doi.org/10.1088/1367-2630/acb3ee

2023-01-19

New Journal of Physics

Abstract:Intrinsic van der Waals materials layered magnets have attracted much attention, especially the air-stable semiconductor CrSBr. Herein, we carry out a comprehensive investigation of both bulk and monolayer CrSBr using the first-principles linear-response method. Through the calculation of the magnetic exchange interactions, it is confirmed that the ground state of bulk CrSBr is A-type antiferromagnetic, while there are five sizable large intralayer exchange interactions with small magnetic frustration, which results in a relatively high magnetic transition temperature of both bulk and monolayer CrSBr. Moreover, the significant electron doping effect and strain effect are demonstrated, with further increased Curie temperature for monolayer CrSBr, as well as an antiferromagnetic to ferromagnetic phase transition for bulk CrSBr. We also calculate the magnon spectra using linear spin-wave theory. These features of CrSBr can be helpful to clarify the microscopic magnetic mechanism and promote the application in spintronics.

physics, multidisciplinary
Magnetic transition from antiferromagnetic CrS2 to ferromagnetic MoSe2/CrS2

Jiang Yu,Huang Can,Zhu Yan,Pan Yan-Fei,Fan Ji-Yu,Ma Chun-Lan

DOI: https://doi.org/10.1360/SSPMA-2021-0157

2022-01-01

Abstract:We studied the atomic and magnetic structures of the two-dimensional (2D) single-layer CrS2 and double-layer MoSe2/CrS2 systems based on the first principles. In this paper, the generalized Bloch condition was used to calculate the dispersion relationship E(q) between the energy of the spin spiral and spin spiral wave vector q. The curve was fitted by the Heisenberg model, and the multiple nearest neighbor Heisenberg interaction (HBI) parameters J(1)-J(6) of the single-layer CrS2 and MoSe2/CrS2 double-layer systems were obtained. The fitted HBI parameters were used to derive the E(q) over the full Brillouin zone. The paper found that the nonmagnetic MoSe2 layer changes the magnetic structure of CrS2 from an intralayer antiferromagnetic arrangement to an intralayer ferromagnetic arrangement. The mechanism can be summarized as follows: the MoSe2 layer expands the density of states of the Cr atoms, and the electron gas in MoSe2/CrS2 is transferred from the metallic CrS2 to the semiconductor MoSe2, resulting in a reduction in the Ruderman-KittelKasuya-Yosida (RKKY) interaction of the antiferromagnetic effect in CrS2. Finally, MoSe2/CrS2 exhibits ferromagnetism. This article lays the foundation to explore the various interaction mechanisms of 2D magnetic materials, such as double exchange and RKKY exchange, for the design and search for high-Curie-temperature magnetic materials and analysis of various 2D magnetic systems.
Hard ferromagnetic behavior in atomically thin CrSiTe 3 flakes

Cheng Zhang,Le Wang,Yue Gu,Xi Zhang,Xiuquan Xia,Shaolong Jiang,Liang-Long Huang,Ying Fu,Cai Liu,Junhao Lin,Xiaolong Zou,Huimin Su,Jia-Wei Mei,Jun-Feng Dai

DOI: https://doi.org/10.1039/d2nr00331g

IF: 6.7

2022-01-01

Nanoscale

Abstract:We reported a layer-controlled transition from the soft to hard ferromagnetic state in atomically thin CrSiTe 3 flakes. Our study paves the way towards exploring and learning much more atomically thin and layered intrinsic ferromagnets.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4monolayer.

Yuanyuan Jia,Yan Gao,Yong Liu

DOI: https://doi.org/10.1088/1361-648X/ad098e

2023-01-01

Abstract:Two-dimensional (2D) ferromagnetic (FM) half-metallic materials have attracted intensive attention due to their unique electronic and magnetic properties and potential applications in spintronic devices. In this study, we predicted a stable 2D half-metallic material monolayer CrSiSe4using first-principles density functional theory. The structure, electronic and magnetic properties were systematically studied. The calculations show that the monolayer CrSiSe4is a dynamically stable FM half-metallic material. The spin-dependent transport properties and the Curie temperature up to 239 K are demonstrated. The spin band gap of monolayer CrSiSe4was about 0.83 eV by the the Heyd-Scuseria-Ernzerhof function calculation. The magnetic anisotropy energy of each Cr atom in the monolayer of CrSiSe4is-552.3μeV. When the applied biaxial tensile strain is greater than 2%, monolayer CrSiSe4spin-up conduction band and valence band will show a band gap at the Fermi level, and the electronic properties change from a half-metal to a semiconductor. Thus, the monolayer CrSiSe4can provide an ideal candidate material for exploring 2D magnetic and spintronics experiments.
Room-temperature antiferromagnetic CrSe monolayer with tunable metal–insulator transition in ferroelectric heterostructures

Xiao-Sheng Ni,Yue-Yu Zhang,Dao-Xin Yao,Yusheng Hou

DOI: https://doi.org/10.1063/5.0145945

IF: 4

2023-04-24

Applied Physics Letters

Abstract:Recently, there has been a rapidly growing interest in two-dimensional (2D) transition metal chalcogenide monolayers (MLs) due to their unique magnetic and electronic properties. By using an evolutionary algorithm and first-principles calculations, we report the discovery of a previously unexplored, chemically, energetically, and thermodynamically stable 2D antiferromagnetic (AFM) CrSe ML with a Néel temperature higher than room temperature. Remarkably, we predict an electric field-controllable metal–insulator transition in a van der Waals heterostructure comprised of CrSe ML and ferroelectric Sc2CO2. This tunable transition in the CrSe/Sc2CO2 heterostructure is attributed to the change in the band alignment between CrSe and Sc2CO2 caused by the ferroelectric polarization reversal in Sc2CO2. Our findings suggest that 2D AFM CrSe ML has important potential applications in AFM spintronics, particularly in the gate voltage conducting channel.

physics, applied
Magnetic transition from antiferromagnetic CrS2 to ferromagnetic MoSe2/CrS2

Jiang Yu,Huang Can,Zhu Yan,Pan Yan-Fei,Fan Ji-Yu,Ma Chun-Lan

DOI: https://doi.org/10.1360/SSPMA-2021-0157

2022-01-01

Abstract:We studied the atomic and magnetic structures of the two-dimensional (2D) single-layer CrS2 and double-layer MoSe2/ CrS2 systems based on the first principles. In this paper, the generalized Bloch condition was used to calculate the dispersion relationship E(q) between the energy of the spin spiral and spin spiral wave vector q. The curve was fitted by the Heisenberg model, and the multiple nearest neighbor Heisenberg interaction (HBI) parameters J(1)-J(6) of the singlelayer CrS2 and MoSe2/CrS2 double-layer systems were obtained. The fitted HBI parameters were used to derive the E(q) over the full Brillouin zone. The paper found that the nonmagnetic MoSe2 layer changes the magnetic structure of CrS2 from an intralayer antiferromagnetic arrangement to an intralayer ferromagnetic arrangement. The mechanism can be summarized as follows: the MoSe2 layer expands the density of states of the Cr atoms, and the electron gas in MoSe2/ CrS2 is transferred from the metallic CrS2 to the semiconductor MoSe2, resulting in a reduction in the Ruderman-KittelKasuya-Yosida (RKKY) interaction of the antiferromagnetic effect in CrS2. Finally, MoSe2/CrS2 exhibits ferromagnetism. This article lays the foundation to explore the various interaction mechanisms of 2D magnetic materials, such as double exchange and RKKY exchange, for the design and search for high-Curie-temperature magnetic materials and analysis of various 2D magnetic systems.
Electronic properties of polymorphic two-dimensional layered chromium disulphide

Mohammad Rezwan Habib,Shengping Wang,Weijia Wang,Han Xiao,Sk Md Obaidulla,Anabil Gayen,Yahya Khan,Hongzheng Chen,Mingsheng Xu

DOI: https://doi.org/10.1039/c9nr04449c

IF: 6.7

2019-11-14

Nanoscale

Abstract:Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI3, Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X = Cl and Br) have attracted considerable attention due to their potential application in spintronics. Despite few experimental studies, theoretical studies reported that 2D chromium dichalcogenide (CrS2) materials show unique properties such as valley polarization, piezoelectric coupling, and phase dependent intrinsic magnetic properties. Here, we report for the first time the synthesis of 2D layered CrS2 flakes down to the monolayer via the chemical vapor deposition (CVD) method, its phase structures and electronic properties. We observed the 2H, 1T, and 1T' phases coexisting in CVD grown monolayer CrS2. The formation of 1T' phases from 1T phases is described by dimerization of metal atoms at room temperature according to our molecular dynamics studies. The coexistence of 1T and 1T' phases with 2H phases is referred to as the 1T and 1T' puddling phenomenon. We theoretically showed that the monolayer 2H-CrS2 is a direct bandgap semiconductor with a gap of approximately 0.95 eV predicted by the PBE functional, while the 1T- and 1T'-CrS2 are metallic and semi-metallic with approximately 10 meV gap, respectively. Furthermore, 2H CrS2 exhibits nonmagnetic semiconducting properties while for ferromagnetic spin configuration, the 1T and 1T' CrS2 show magnetic characteristics with 0.531μB and 2.206μB magnetic moment per Cr atom respectively, for ferromagnetic spin configuration as predicted from DFT+U calculation. Importantly, CrS2-based field-effect transistors exhibit a p-type behavior. Our study would stimulate further exploration of 2D layered CrS2 with astonishing properties and open up a whole new avenue for the urgent need for developing multifunctional 2D materials for nanoelectronics, valleytronics, and spintronics.
Multiferroic Metallic Monolayer Cu(CrSe2)2

Ke Yang,Yuxuan Zhou,Yaozhenghang Ma,Hua Wu

2024-08-29

Abstract:The two-dimensional (2D) Cu(CrSe$_2$)$_2$ monolayer stands out for its combined ferromagnetic (FM), ferroelectric (FE), and metallic properties, marking itself as a prominent 2D multiferroic metal. This work studies those properties and the relevant physics, using density functional calculations, Monte Carlo simulations, and $ab$ $initio$ molecular dynamics. Our results show that Cu(CrSe$_2$)$_2$ monolayer is in the Cr$^{3+}$ $t_{2g}^3$ state with $S$ = 3/2 and Cu$^{1+}$ $3d^{10}$ with $S$ = 0. A ligand hole in the Se 4$p$ orbitals gives rise to metallic behavior and enhances the FM coupling between the local Cr$^{3+}$ $S$ = 3/2 spins. The observed in-plane magnetic anisotropy primarily arises from exchange anisotropy, which is associated with the Cr-Se-Cr itinerant ferromagnetism. In contrast, both single-ion anisotropy and shape magnetic anisotropy contribute negligibly. The Dzyaloshinskii-Moriya interaction is also quite weak, only about 3\% of the intralayer exchange parameters. Our Monte Carlo simulations show a FM Curie temperature ($T_{\rm C}$) of 190 K. Moreover, the monolayer exhibits a vertical FE polarization of 1.79 pC/m and a FE polarization switching barrier of 182 meV/f.u., and the FE state remains stable above 800 K as shown by $ab$ $initio$ molecular dynamics simulations. Furthermore, a magnetoelectric coupling is partially manifested by a magnetization rotation from in-plane to out-of-plane associated with a FE-to-paraelectric transition. The magnetization rotation can also be induced by either hole or electron doping, and the hole doping increases the $T_{\rm C}$ up to 238 K. In addition, tensile strain reduces the FE polarization but enhances $T_{\rm C}$ to 290 K, while a compressive strain gives an opposite effect. Therefore, the multiferroic metallic Cu(CrSe$_2$)$_2$ monolayer may be explored for advanced multifunctional electronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Room-temperature antiferromagnetic CrSe monolayer with tunable metal-insulator transition in ferroelectric heterostructures

Xiao-Sheng Ni,Yue-Yu Zhang,Dao-Xin Yao,Yusheng Hou

DOI: https://doi.org/10.1063/5.0145945

2023-04-28

Abstract:Recently, there has been a rapidly growing interest in two-dimensional (2D) transition metal chalcogenide monolayers (MLs) due to their unique magnetic and electronic properties. By using an evolutionary algorithm and first-principles calculations, we report the discovery of a previously unexplored, chemically, energetically, and thermodynamically stable 2D antiferromagnetic (AFM) CrSe ML with a Néel temperature higher than room temperature. Remarkably, we predict an electric field-controllable metal-insulator transition (MIT) in a van der Waals (vdW) heterostructure comprised of CrSe ML and ferroelectric Sc2CO2. This tunable transition in CrSe/Sc2CO2 heterostructure is attributed to the change in the band alignment between CrSe and Sc2CO2 caused by the ferroelectric polarization reversal in Sc2CO2. Our findings suggest that 2D AFM CrSe ML has important potential applications in AFM spintronics, particularly in the gate voltage conducting channel.

Materials Science
Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$

Tai Kong,Karoline Stolze,Ni Danrui,Satya K. Kushwaha,Robert J. Cava

DOI: https://doi.org/10.1103/PhysRevMaterials.2.014410

2017-11-17

Abstract:Single crystals of CrSbSe$_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe$_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $\sim$145 K and an effective moment of $\sim$4.1 $\mu_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $\beta\sim$0.25, $\gamma\sim$1.38 and $\delta\sim$6.6.

Materials Science
Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

Wangping Xu,Sajjad Ali,Yuanjun Jin,Xiaozhi Wu,Hu Xu

DOI: https://doi.org/10.1021/acsaelm.0c00686

IF: 4.494

2020-11-20

ACS Applied Electronic Materials

Abstract:Two-dimensional (2D) intrinsic ferromagnetic semiconductors (FMSs) received huge attention due to their fascinating electron charge and spin properties, which are promising candidates for spintronic devices. In this work, we propose a class of monolayer FMS in alkali-based chromium chalcogenides (XCrY2, X = Li and Na; Y = S, Se, and Te). The proposed monolayer XCrY2 is expected to be exfoliated from their corresponding bulk counterparts, which are confirmed by first-principles calculations. Our calculations indicate that these monolayer FMS shows the ferromagnetic ground states possessing the high Curie temperatures using the Ising and Heisenberg models. The hybrid functional calculations show that LiCrSe2, NaCrSe2, and NaCrTe2 have desirable direct band gaps. In addition, it is found that the spin–orbit (SOC) effect can tremendously change the effective mass of the holes, resulting in higher hole mobility (up to 3 × 103 cm2 v–1 s–1). Our study provides a feasible way to realize 2D intrinsic FMS.This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2

Bocheng Lei,Aolin Li,Wenzhe Zhou,Yunpeng Wang,Wei Xiong,Yu Chen,Fangping Ouyang

DOI: https://doi.org/10.1007/s11467-023-1387-y

2024-03-25

Frontiers of Physics

Abstract:Two-dimensional materials with high-temperature ferromagnetism and half-metallicity have the latest applications in spintronic devices. Based on first-principles calculations, we have investigated a novel two-dimensional CrS 2 phase with an orthorhombic lattice. Our results suggest that it is stable in dynamics, thermodynamics, and mechanics. The ground state of monolayer orthorhombic CrS 2 is both ferromagnetic and half-metallic, with a high Curie temperature of 895 K and a large spin-flipping gap on values of 0.804 eV. This room-temperature ferromagnetism and half-metallicity can maintain stability against a strong biaxial strain ranging from −5% to 5%. Meanwhile, increasing strain can significantly maintain the out-of-plane magnetic anisotropy. A density of states analysis, together with the orbital-resolved magnetic anisotropy energy, has revealed that the strain-enhanced MAE is highly related to the 3d-orbital splitting of Cr atoms. Our results suggest the monolayer orthorhombic CrS 2 is an ideal candidate for future spintronics.

physics, multidisciplinary
Surface‐Sensitive Detection of Magnetic Phase Transition in Van Der Waals Magnet CrSBr

Fangfang Pei,Jingjing Yu,Jiayuan Zhou,Siyu Wang,Daxiang Liu,Yanan Yuan,Lei Xi,Feng Jin,Xucai Kan,Chao Wang,Lingfei Wang,Wensheng Yan,Yizheng Wu,Shouguo Wang,Kai Chen,Tianping Ma,Xue Liu,Mengmeng Yang,Qian Li

DOI: https://doi.org/10.1002/adfm.202309335

IF: 19

2023-12-12

Advanced Functional Materials

Abstract:Combining surface‐sensitive X‐ray magnetic linear dichroism and X‐ray magnetic circular dichroism measurements with bulk‐sensitive vibrating sample magnetometry characterization, the authors unambiguously identify similar Néel temperature but dramatically different Curie temperature for surface and bulk in CrSBr. This result enriches understanding of intrinsic magnetism in CrSBr and provides this material to be a promising building block for future spintronic devices. 2D magnets have recently drawn enormous interest. As an air‐stable A‐type van der Waals antiferromagnet (AFM), CrSBr has attracted great attention but has also led to controversies about its large‐span ordering temperatures. Herein, a systematic study of the magnetic phase transition in single‐crystalline CrSBr with ultrahigh‐quality through surface‐sensitive X‐ray magnetic linear dichroism and X‐ray magnetic circular dichroism measurements combined with vibrating sample magnetometry for characterization of bulk magnetization is reported. The interlayer AFM order of both surface and bulk CrSBr is revealed to maintain a similar Néel temperature within the range of 132–142 K. However, the intralayer ferromagnetic (FM) order of surface CrSBr is found to sustain up to ≈238 K, 70 K higher than the value obtained from the bulk CrSBr, demonstrating a dramatically different surface and bulk Curie temperature in CrSBr. Moreover, a half‐filled t2g electronic state for Cr3+ ions with magnetic moment of ≈3 μB/Cr in CrSBr is clearly identified. These results enrich the understanding of the electronic structure and magnetism in CrSBr, providing this material as a promising building block for future spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2

Han Xiao,Wenzhuo Zhuang,Leyi Loh,Tao Liang,Anabil Gayen,Peng Ye,Michel Bosman,Goki Eda,Xuefeng Wang,Mingsheng Xu

DOI: https://doi.org/10.1002/admi.202201353

IF: 5.4

2022-09-21

Advanced Materials Interfaces

Abstract:The van der Waals epitaxial growth of CrS2 nanoflakes with thicknesses down to 1.5 nm are realized via a Te‐assisted chemical vapor deposition routine. Structure and phase characterization confirm the Cr and S stoichiometric ratio of ≈1:2 with a 1T phase layered structure, and a room‐temperature ferromagnetic signal is also revealed in the superconducting quantum interference device test. 2D magnetic materials have been attracting enormous interest for both fundamental research and potential spintronic applications. Here, this work demonstrates the van der Waals epitaxial growth of air‐stable 2D magnetic CrS2 on mica substrate by chemical vapor deposition (CVD). The layered nature, high crystallinity, stoichiometry, and high‐purity 1T phase of the individual CrS2 crystallites are verified by a series of complementary characterization techniques including atomic force microscope, scanning transmission electron microscope and energy dispersive X‐ray spectroscopy. The single‐crystalline 1T‐phase CrS2 crystallites exhibit a metallic nature with a moderate conductivity of 1.78 × 102 S m−1 and a room‐temperature ferromagnetism with a coercive field of 28.7 Oe. The CVD growth of the air‐stable CrS2 crystallites with 1T phase and high crystallinity offer a new platform for the further physics research and spintronic device applications.

materials science, multidisciplinary,chemistry
Out‐of‐Plane Superexchange Interaction Enhanced Ferromagnetism in Semiconducting Monolayer Cr2Se3

Shipeng Lu,Zhonglin He,Yinping Pan,Zhiqiang Guo,Yichen Yang,Fan Wu,Yekai Song,Zhuojun Li,Zhongkai Liu,Zhengtai Liu,Dawei Shen,Lei Chen,Yandong Ma,Shujie Tang,Xiaoming Xie

DOI: https://doi.org/10.1002/adfm.202406339

IF: 19

2024-06-07

Advanced Functional Materials

Abstract:This work presents a novel 2D ferromagnetic semiconducting material with an unprecedented Curie temperature (Tc) of 230 K, over four times higher than previous records for 2D magnetic semiconductors. Such a high Tc arises from the synergy between in‐plane and out‐of‐plane superexchange interactions, and puts forward a novel concept of regulating properties in the vertical dimension for 2D materials. 2D magnetic semiconductors exhibit great potential for next‐generation spintronics, but realizing their full capabilities has been hindered by the low Curie temperatures (Tc) below 50 K observed in current materials. Here, a new mechanism to substantially enhance the Tc of 2D semiconducting materials through incorporating both in‐plane and out‐of‐plane superexchange interactions enabled by structural design is demonstrated. Specifically, monolayer Cr2Se3 is synthesized with a five‐layer Se–Cr–Se–Cr–Se atomic structure using molecular beam epitaxy (MBE). This unique structure not only possesses optimized in‐plane superexchange interaction but also incorporates out‐of‐plane Cr–Se–Cr couplings. Scanning tunneling spectroscopy (STS) and angular‐resolved photoemission spectroscopy (ARPES) confirm its semiconducting nature. Remarkably, the ferromagnetic phase transition observed by ARPES and Magnetic Force Microscopy (MFM) indicated that its Tc is up to 230 K. This not only establishes a new record for Tc in 2D ferromagnetic semiconductor materials but also introduces a novel approach to modulating materials' properties by manipulating the vertical dimension in 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

CrSbS 3 monolayer: a potential phase transition ferromagnetic semiconductor

Crsbs3 Monolayer: A Potential Phase Transition Ferromagnetic Semiconductor

Structural Phase Transition of Multilayer VSe2.

CrSbSe3: a Pseudo One-Dimensional Ferromagnetic Semiconductor

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Calculated magnetic exchange interactions in the van der Waals layered magnet CrSBr

Magnetic transition from antiferromagnetic CrS2 to ferromagnetic MoSe2/CrS2

Hard ferromagnetic behavior in atomically thin CrSiTe 3 flakes

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4monolayer.

Room-temperature antiferromagnetic CrSe monolayer with tunable metal–insulator transition in ferroelectric heterostructures

Magnetic transition from antiferromagnetic CrS<sub>2</sub> to ferromagnetic MoSe<sub>2</sub>/CrS<sub>2</sub>

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Multiferroic Metallic Monolayer Cu(CrSe2)2

Room-temperature antiferromagnetic CrSe monolayer with tunable metal-insulator transition in ferroelectric heterostructures

Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe$_3$

Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2

Surface‐Sensitive Detection of Magnetic Phase Transition in Van Der Waals Magnet CrSBr

Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2

Out‐of‐Plane Superexchange Interaction Enhanced Ferromagnetism in Semiconducting Monolayer Cr2Se3