Abstract:Colloidal semiconductor nanocrystals are an important class of materials which have many desirable optoelectronic properties. In their bulk phases, gallium- and aluminum-containing III-V materials such as GaAs, GaP, and Al1-xGaxAs represent some of the most technologically important semiconductors. However, their colloidal synthesis by traditional methods is difficult due to the high temperatures needed to crystallize these highly covalent materials and the extreme reactivity of Ga- and Al- precursors toward organic solvents at such high temperatures. A recently developed paradigm shift in the synthesis of these materials is to use molten inorganic salts as solvents to prepare Ga- containing III-V colloidal nanocrystals by cation exchange of the corresponding indium pnictide (InPn) colloidal nanocrystals. There have been several successful applications of molten salt solvents to prepare III-phosphide colloidal nanocrystals. However, little is known about the nature of these reaction environments at the relevant reaction conditions and synthesis of III-arsenide colloidal nanocrystals remains challenging. Herein we report a detailed study on cation exchange of InPn nanocrystals using nominally Lewis basic molten salt solvents with added gallium halides. Surprisingly, these salt systems phase separate into two immiscible phases, and the nanocrystals preferentially segregate to one of the phases. Using a suite of in situ spectroscopy tools, we identify the phase the nanocrystals segregate to as Lewis neutral alkali tetrahalogallate molten salts. We apply in situ high-temperature Raman spectroscopy to identify the chemical species present in several molten salt compositions at experimentally relevant reaction conditions to elucidate a molecular basis for the reactivity observed. We then employ Lewis neutral KGaI4 molten salts to prepare high-quality In1-xGaxAs and In1-xGaxP nanocrystals and demonstrate that deviation from Lewis neutral conditions accelerate nanocrystal decomposition in the case of III-arsenide materials. Further, we expand to KAlI4-based molten salts to prepare In1-x-yGaxAlyAs nanocrystals which represent an example of solution-synthesized quaternary III-V nanocrystals. These insights provide a molecular basis for the rational development of molten salt solvents, thus allowing the preparation of a diverse array of multicomponent III-V colloidal nanocrystals.

General Synthetic Route to High Quality Colloidal III-V Semiconductor Quantum Dots Based on Pnictogen Chlorides.

One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

InP Quantum Dots: Synthesis and Lighting Applications.

Colloidal Chemical Synthesis and Characterization of InAs Nanocrystal Quantum Dots

Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

Synthesis of Ternary and Quaternary Group III-Arsenide Colloidal Quantum Dots via High-Temperature Cation Exchange in Molten Salts: The Importance of Molten Salt Speciation

Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

In Situ Formation of Iodide Precursor for Perovskite Quantum Dots with Application in Efficient Solar Cells

General Synthesis of I-III-VI2 Ternary Semiconductor Nanocrystals.

Amino‐Arsine and Amino‐Phosphine Based Synthesis of InAs@InP@ZnSe core@shell@shell Quantum Dots

Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots

Development of Non-Cadmium I-III-VI Quantum Dots and their Surface Modification for Biomedical Applications

Resurfacing of InAs Colloidal Quantum Dots Equalizes Photodetector Performance across Synthetic Routes

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Synthesis of NIR/SWIR Absorbing InSb Nanocrystals Using Indium(I) Halide and Aminostibine Precursors

Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots

Aminophosphines: A Double Role in the Synthesis of Colloidal Indium Phosphide Quantum Dots

Aqueous synthesis of III???V semiconductor GaP and InP exhibiting pronounced quantum confinementElectronic supplementary information (ESI) available: experimental details. See http://www.rsc.org/suppdata/cc/b2/b210164e/

High-Affinity Ligand-Enhanced Passivation of Group III–V Colloidal Quantum Dots for Sensitive Near-Infrared Photodetection

Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement.