Abstract:Van der Waals heterostructures formed by stacking two different semiconductor monolayers develop rapidly and exhibit very unique and diverse physical properties. With the implementation of first principles calculations based on density functional theory (DFT), we investigate the effect of single-atom doping of Al, Ga, C, N, O, F, P, S and Cl and double oxygen atoms doping on the structural, electronic and magnetic properties of BAs/WSe 2 heterostructure. The results illustrate that the Al, Ga, N and P atom-doped systems, which are grouped with B or As atoms, essentially maintain the direct band gap width of the pristine system, while the F and Cl single-atom doped systems open the band gaps of 0.118 and 0.153 eV, respectively. Single and double oxygen atoms doped systems except zigzag 0–1 system exhibit magnetic properties. Moreover, the magnetic moment of the double oxygen atoms doped systems is about twice as large as that of the O single atom doped system. In particular, the armchair 0–3 system opens a band gap of 87 meV compared to the single-atom doped system, with the VBM contributed by spin up states and the CBM occupied by spin down states. By analyzing the absorption spectra, we found that both the pristine BAs/WSe 2 system and the doped system have excellent optical absorption in a wide range of ultraviolet and visible light. In particular, the four doped systems Al, Ga, N and P and the pristine BAs/Se2 system have a direct band gap and type I band alignment, which can be applied to electronic devices such as laser emitters (LE) and light emitting diodes (LEDs). Our investigation provides a robust theoretical basis for the application of single-atom doped BAs/WSe 2 heterostructures in future optoelectronic devices such as LE, LEDs and photodetector devices.

Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoS x Se 2-x /h-BN heterostructure.

Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoS<sub>x</sub>Se<sub>2−x</sub>/h-BN heterostructure

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

The Electronic and Magnetic Properties of H-Bn/mos2 Heterostructures Intercalated with 3d Transition Metal Atoms

Half-metallic Ferromagnetic Properties of Mn-doped MoSe2 and Its Heterostructure

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

The electronic and magnetic properties of h-BN/MoS 2 heterostructures intercalated with 3d transition metal atoms

Strain Robust Spin Gapless Semiconductors/half-Metals in Transition Metal Embedded MoSe2monolayer.

Substitutional doping at S site of MoS2/G heterostructure: The influence on voltage-current and electronic characteristics

Tuning the Magnetic Properties of the Monolayer MoSe2 by Nonmetal Doping: First-principles Study

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Magnetic Engineering in InSe/black-phosphorus Heterostructure by Transition-Metal-atom Sc-Zn Doping in the Van Der Waals Gap

Exploring the versatility in the MoSe2/WS2 heterostructures

Effect of 3d Transition Metal Atom Intercalation Concentration on the Electronic and Magnetic Properties of Graphene/MoS2 Heterostructure: A First-Principles Study

Effects of atom doping on the electronic and magnetic properties of BAs/WSe 2 heterostructure

Effect of Doping and Defects on the Electronic Properties of MoS 2 /WSe 2 Bilayer Heterostructure: A First-principles Study

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2

Effect of NM (B, C, N, O and F) doping and Fe NM co-doping on structure, electronic and magnetic properties of monolayer 2H MoTe 2 : A first principle investigation

Emergent mixed antiferromagnetic state in MnPS3(1-x)Se3x

Tuning the electronic and magnetic properties of MoS 2 bilayers by transition-metal intercalation