An RF-to-DC Rectifier Based on Tunable Threshold Diodes

Yingqiu Cao,Xiaonan Hui,Edwin C. Kan

DOI: https://doi.org/10.1109/jrfid.2019.2903923

2019-01-01

IEEE Journal of Radio Frequency Identification

Abstract:This paper proposed a Dickson RF-to-DC rectifier based on floating-gate MOS diodes with tunable threshold voltages to improve RF input sensitivity and to counter process variation in logic CMOS foundry technology. When compensation by active circuits is excluded for system reasons, prior works relied on the availability of diodes with nearly zero threshold voltage in a mixed-signal process, but was unavoidably susceptible to process variation and leakage currents at low thresholds. Our proposed rectifier can have each constituent diode tuned to its optimal threshold at the wafer testing stage to maximize the operational output voltage at various loads and to compensate device-level variations. An optimization algorithm was implemented to automatically take the output voltage as feedback for system calibration in a short duration. The measurements of the tunable-threshold rectifier show > 4dB improvement in input sensitivity compared to the rectifier built by foundry-provided zero-threshold transistors. The proposed circuits can be combined with other techniques including high- ${Q}$ impedance matching for input voltage boosting and hierarchical tandem stages for further improvement on operating conditions. With a ${Q}\,\,{=}$ 10 matching network, −26 dBm sensitivity and 22% efficiency can be achieved for about 0.5 V dc output to a $500~{k} {\Omega }$ load at 570 MHz.