Phase-Change Based Interlayer Exchange Coupling Control

Fan Xiaofei,Wei Guodong,Lin Xiaoyang,Wang Xinhe,Si Zhizhong,Zhang Xueying,Shao Qiming,Mangin Stephane,Fullerton Eric,Jiang Lei,Zhao Weisheng
DOI: https://doi.org/10.1016/j.matt.2020.04.001
2019-01-01
Abstract: Changing the interlayer exchange coupling between magnetic layers in situ is a key issue for spintronic, as it allows for optimization of properties that are desirable for applications including magnetic sensing and memory. In this paper, we utilize the phase-change material VO2 as the spacer layer to regulate the interlayer exchange coupling between the ferromagnetic layers with perpendicular magnetic anisotropy. Successful growth of ultra-thin (several nanometers) VO2 films with metal-to-insulator transition features is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 systems with distinct interfaces. Such a magnetic multilayer system demonstrates an evolution from weak antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase-change. The underlying mechanism originates from the electronic structure change of the spacer layer from insulation to metallicity. As a demonstration of phase-change spintronics, this work may reveal the great potential of materials innovation for next-generation spintronics.
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