Abstract:Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.

Highly-efficient and All-Solution-processed Red-Emitting InP/ZnS-based Quantum-Dot Light-Emitting Diodes Enabled by Compositional Engineering of Electron Transport Layers

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

All-solution processed high performance inverted quantum dot light emitting diodes

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Compositional Engineering of Multinary Cu–In–Zn-based Semiconductor Nanocrystals for Efficient and Solution-Processed Red-Emitting Quantum-Dot Light-Emitting Diodes

Efficient CuInS2/ZnS Quantum Dots Light‐Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer

Highly Efficient and Bright Red Quantum Dot Light-Emitting Diodes with Balanced Charge Injection

Fully solution-processed red tandem quantum dot light-emitting diodes with an EQE exceeding 35%

Highly Efficient Top‐Emitting Quantum‐Dot Light‐Emitting Diodes with Record‐Breaking External Quantum Efficiency of over 44.5%

Synthesis of highly fluorescent InP/ZnS small-core/thick-shell tetrahedral-shaped quantum dots for blue light-emitting diodes

High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

Highly Efficient Inverted Quantum Dot Light-Emitting Diodes Employing Sol-Gel Derived Li-doped ZnO As Electron Transport Layer

Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

Boosting Efficiency of InP Quantum Dots-Based Light-Emitting Diodes by an In-Doped ZnO Electron Transport Layer

Phosphorescent Dye Sensitized Quantum‐Dot Light‐Emitting Diodes with 37% External Quantum Efficiency

High-Efficiency, Solution-Processed White Quantum Dot Light-Emitting Diodes with Serially Stacked Red/Green/Blue Units

Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes.

Efficient Quantum-Dot Light-Emitting Diodes Employing Thermally Activated Delayed Fluorescence Emitters As Exciton Harvesters.