Abstract:With the rapid development of wireless communications, GaN HEMTs, which have various advantages of high power density, high electron mobility, and high breakdown threshold, have attracted increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal models are vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electrom mobility transistors (HEMTs) accurately. A series of scaling rules are established for the intrinsic parameters of the device, including drain-source current I ds , input capacitance C gs and C gd , which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performances of the L-band GaN high-efficiency power amplifier with the length of gate of 14.4mm is analyzed. This amplifier demonstrates outstanding performance with the output power up to 46.5dBm and the drain efficiency of over 70% covering the entire frequency range from 1120MHz to 1340MHz. Great agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for the design of advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model lacks the ability to characterize the dynamical behavior induced by trap and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity will be investigated to broaden the applicability of the proposed model in the case of continuous waves.

An Angelov Large-Signal FET Model Up to 67 GHz

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Scalable RFCMOS Model for 90 Nm Technology

A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

An Accurate Large-Signal Model for Rf Soi Ldmos Including Self-Heating Effect

Modeling diamond semiconductor transistors for millimeter wave power amplifier design

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs

Novel Physics-Based Small-Signal Modeling and Characterization for Advanced RF Bulk FinFETs

Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Automatic And Scalable Parametric Modeling For 1-100ghz Transmission Line

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

A large signal scaling model of high power GaN microwave device