Crystallization-induced semiconductor-metal transition in an amorphous CoFeTaBO magnetic semiconductor nanocomposite

Kaixuan Fang,Yingqi Zhang,Zhengjun Zhang,Na Chen
DOI: https://doi.org/10.1016/j.jallcom.2019.05.056
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:In the present study, we investigated the effects of crystallization on magnetic and electrical properties of an amorphous CoFeTaBO magnetic semiconductor nanocomposite. Crystallization was found to trigger a semiconductor-metal transition in the nanocomposite. The room-temperature resistivity was decreased by nearly three orders of magnitude due to the crystallization. The crystalline phase in the sample was determined to have CoFe2O4-type cubic spinel structure. In comparison with the amorphous nanocomposite, the crystallized nanocomposite exhibited much harder ferromagnetism. The out-of-plane coercivity of the as-prepared sample was increased from below 1 Oe to ∼490 Oe. In addition, the crystallized sample exhibited enhanced anisotropic magnetoresistance. The crystallization-induced significant difference in the magnetic and electrical properties may enable the amorphous nanocomposite as a magnetic phase change material to play an important role in magnetoelectric devices.
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