Abstract:In the post-Moore's Law era, there is a growing trend towards the development of advanced electronic devices that combine sensory perception, data storage, and computation for various applications. Two-dimensional semiconductor transistors, which utilize charge storage mechanisms, present a promising avenue for future information devices. Here, we introduce a neuromorphic triboelectric charge-trapping MoTe 2 transistor with stacked high- k dielectric structure, aiming to facilitate mechano-driven logic-in-memory for neuromorphic computation. By gating through triboelectric potential, the device demonstrates superior electrical performance, including an impressive switching ratio (>10 5 ), minimal off-state current (~0.6 pA), and robust cyclic stability. By modulating the trapped charges in the stack gate structure via tribopotential modulation, the conductivity state of the MoTe 2 channel can be readily controlled, realizing an exceptional mechano-driven nonvolatile memory with a retention time of up to 10 4 seconds, consistent switching behavior over 100 cycles, and multi-level data storage capabilities at 8 levels. Furthermore, a mechano-driven programmable inverter can be achieved by connecting a load resistor in series. The triboelectric charge-trapping transistor also possesses the capacity to emulate typical synaptic characteristics at low energy levels (~147 fJ). Leveraging the finely tunable conductivity through tribopotential, we demonstrate a mechano-assisted artificial neural network capable of recognizing handwritten digits with an accuracy rate of approximately 88.59%. These findings underscore the significant potential of the triboelectric charge-trapping transistor in mechanical-assisted real-time interaction, energy-efficient data storage, and neuromorphic computing.

InSe Tribotronic Transistors: Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics (adv. Funct. Mater. 19/2019)

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