Abstract:In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.

Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr x NiSn Synthesized by a Modified Solid-State Reaction

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Impact of Interstitial Ni on the Thermoelectric Properties of the Half-Heusler TiNiSn

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Enhancing the Thermoelectric Properties via Modulation of Defects in P‐Type MNiSn‐Based (M = Hf, Zr, Ti) Half‐Heusler Materials

Fabrication and Thermoelectric Properties of Fine-Grained TiNiSn Compounds

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Improved thermoelectric properties of doped A0.5B0.5NiSn (A, B = Ti, Zr, Hf) with a special quasirandom structure

Improved Thermoelectric Properties of TiNiSn Through Enhancing Strain Field Fluctuation

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study

Multi-Interface-Induced Thermal Conductivity Reduction and Thermoelectric Performance Improvement in a Cu–Ni Alloy

High Power Factor Nb-Doped TiO2 Thermoelectric Thick Films: Toward Atomic Scale Defect Engineering of Crystallographic Shear Structures.

Interstitials in Thermoelectrics

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

Enhancement in the thermoelectric performance of ZrNiSn-based alloys through extra Zr-rich nanoprecipitates with superstructures

Tuning Multiscale Microstructures to Enhance Thermoelectric Performance of N‐type Bismuth‐Telluride‐Based Solid Solutions

Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys

Investigations of microstructures and thermoelectric properties of TiNiSn half-Heusler compounds with micro- and nano-scale copper additions