Abstract:A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24–40 GHz. Load-pull simulations suggest better device broadband performance and peak power-added-efficiency (PAE) around <inline-formula> <tex-math notation="LaTeX">$V_{\text {DD}} =4$ </tex-math></inline-formula>–6 V. Measurement data corroborates the simulations and this PA achieves a small-signal 3-dB bandwidth (BW) of 18.0–40.3 GHz, with max. PAE/<inline-formula> <tex-math notation="LaTeX">$P_{\text {SAT}}$ </tex-math></inline-formula> of 42.1%/18.6 dBm at 28 GHz, and 26.0%/17.2 dBm at 38 GHz at <inline-formula> <tex-math notation="LaTeX">$V_{\text {DD}} = 4$ </tex-math></inline-formula> V. When tested with a 9 MHz <inline-formula> <tex-math notation="LaTeX">$\times \,\, 100$ </tex-math></inline-formula> MHz 256-quadratic-amplitude modulation (QAM) 5G new radio (NR) signal, it achieves an adjacent-channel-leakage-ratio (ACLR) of −27 dBc with <inline-formula> <tex-math notation="LaTeX">$P_{\text {OUT, AVG}}$ </tex-math></inline-formula>/PAE of 11.3 dBm/13.9% at 28 GHz. When compared with state-of-the-art broadband PAs, it achieves the best <inline-formula> <tex-math notation="LaTeX">$S_{21}~3$ </tex-math></inline-formula>-dB BW with excellent peak PAE and linearity. This work also reports the best PAE for broadband medium-power millimeter-wave GaN PA at <inline-formula> <tex-math notation="LaTeX">$P_{\text {SAT}}~\sim 20$ </tex-math></inline-formula> dBm.

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