Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

High Mobility Ge Pmosfets with ZrO2 Dielectric: Impacts of Post Annealing

Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO<sub>2</sub> dielectric

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Impact of Postdeposition Annealing Ambient on the Mobility of Ge Nmosfets with 1-Nm EOT Al2O3/GeOx/Ge Gate-Stacks

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

High-Mobility Ge Pmosfets with Crystalline ZrO2 Dielectric

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility

Off-State Drain Leakage Reduction by Post Metallization Annealing for Al2o3/Gan/Algan/Gan Moshemts on Si

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge Pmosfet by Various PDA Ambiences

Mobility Improvement in Accumulation-Mode GeOI Pmosfets with Back Interface Rearrangement by H2 Annealing

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

High Mobility Ge Pmosfets with Amorphous Si Passivation: Impact of Surface Orientation

Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs