Abstract:An eight FETs and two capacitors (8T2Cs) pixel circuit with dual data voltages ( $V_{\text{data}}$ ’s) is proposed for micro-organic light-emitting diode (OLED) displays, resulting in and validated successfully with an ultra-high pixel-per-inch (PPI) of 6318. This designed pixel circuit can also realize 10-bit threshold voltage ( $V_{\text{th}}$ )-compensated gray levels. It is known that conventional displays are 1024 gray levels by inputting 10-bit $V_{\text{data}}$ ’s to the pixel circuit for generating pixel currents ( $I_{\text{pixel}}$ ’s), resulting in the $V_{\text{data}}$ range of at least 5.12 V with the DAC’s 1-LSB of 5 mV assumed. However, for the CMOS processes of dozens of nanometers, only high-voltage FETs (HVFETs) in large sizes can drive with such large $V_{\text{data}}$ range, undermining the chance of high PPI. The new pixel circuit proposes herein low-voltage FETs (LVFETs) in place of most HVFETs successfully by synthesizing two $V_{\text{data}}$ ’s to generate the required $I_{\text{pixel}}$ ’s for 10-bit gray levels with the dynamic range of $V_{\text{data}}$ reduced to 0.64 V, while the $V_{\text{th}}$ ’s can still compensate. This circuit featuring 6318 PPI is successfully fabricated in the chips of the 55-nm CMOS process for validations. The simulation result show that, with $V_{\text{th}}$ ’s compensated, the $\Delta I_{\mathbf{pixel}}$ ’s with respect to the currents at corner TT are improved from the averaged $+$ 285% of FF to $+$ 11.1% and the averaged $-$ 69.1% of SS to $-$ 9.1%. Favorable voltage linearities were also seen between gray levels. Both DNLs and INLs in the range of $\pm$ 1 LSB were measured on a testkey-form circuit, appearing consistency with the simulation results and verifying the expected performance of the designed dual-data-driven pixel circuit.

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