Maximization of Transporting Bands for High-Performance SnTe Alloy Thermoelectrics

J. Tang,Z. Yao,Z. Chen,S. Lin,X. Zhang,F. Xiong,W. Li,Y. Chen,Y. Pei
DOI: https://doi.org/10.1016/j.mtphys.2019.03.005
IF: 11.021
2019-01-01
Materials Today Physics
Abstract:Environment-friendly thermoelectric SnTe has recently attracted much attention as a top candidate for replacing conventional p-type PbTe. Effective strategies leading to great advancements in this material are typified by manipulation of valence bands and chemical defects, among of which MgTe- and Cu2Te-alloying are particularly successful, respectively, for valence band convergence and lattice thermal conductivity minimization. However, pristine SnTe enables a MgTe solubility of only ∼12%, which might limit the full convergence of possibly transporting bands for an electronic performance maximization. In this work, we show an approach to increase the MgTe solubility up to ∼20%, leading to an involvement of one more highly degenerated valence band Λ for charge transport in addition to existing L and Σ bands. Such a collection of many transporting valence bands enables a great improvement in electronic performance, as well as a significant enhancement in thermoelectric figure of merit with a well-reduced lattice thermal conductivity by the point defects introduced in these SnTe alloys.
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