Exploring the Microscopic Mechanism of Pseudocapacitance with Electronic Structures in Monolayer 1T-Mos2 Electrodes for Supercapacitors

Zhenzhou Zhang,Maokun Wu,Lijing Wang,Jin Wang,Yahui Cheng,Luyan Li,Hong Dong,Hui Liu,Zhanglian Hong,Kyeongjae Cho,Feng Lu,Weichao Wang,Wei-Hua Wang
DOI: https://doi.org/10.1039/c9qm00060g
IF: 8.6834
2019-01-01
Materials Chemistry Frontiers
Abstract:Quasi-two-dimensional 1T-MoS2 is a promising pseudocapacitance (C-redox) electrode material due to its large specific surface area, superior electrical conductivity and mechanical stability. However, the microscopic mechanism of C-redox and its further manipulation via modulating the structures and electronic structures are still unclear. Thus, the C-redox of monolayer 1T-MoS2 has been explored based on first-principles calculations. For monolayer 1T-MoS2 adsorbed by H+ ions on one side or both sides, a band gap opens, decreases and even disappears with the coverage increase in H+ ions up to 100%. In this process, the charge transfer from the monolayer 1T-MoS2 to the adsorbed H+ ions almost linearly increases with the coverage increase in the H+ ions. In contrast, the potential change rate of the monolayer 1T-MoS2 reduces, resulting in the enhancement of C-redox. Herein, the maximum values of C-redox reached similar to 76.7 mu F cm(-2) (252.8 F g(-1)) and similar to 213.7 mu F cm(-2) (704.5 F g(-1)) for the 100% coverage of H+ ions on one side and both sides, respectively. Furthermore, the manipulation of C-redox in the monolayer 1T-MoS2 could be realized through intrinsic defects engineering. Particularly, the C-redox was greatly improved in the system with S vacancies. These results would provide significantly fundamental insights for understanding the correlation between the C-redox and the electronic structures of 1T-MoS2 and other similar quasi-two dimensional materials.
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