Effects of Rare-Earth Erbium Doping on the Electrical Performance of Tin-Oxide Thin Film Transistors

Jin-hua Ren,Kai-wen Li,Jie Shen,Chu-ming Sheng,Yu-ting Huang,Qun Zhang
DOI: https://doi.org/10.1016/j.jallcom.2019.03.277
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:Erbium doped tin-oxide thin film transistors (ErSnO-TFTs) were fabricated by Radio-Frequency magnetron sputtering (RFMS) using SnO target and Er foil. Effects of Er concentration on crystallinity, optical band-gap, surface chemical information, defect states, surface morphology, along with the electrical properties of ErSnO-TFTs, were investigated. The results indicate that moderate Er concentration is beneficial to the performance of ErSnO-TFTs. The relatively good device performance was obtained at the Er concentration of 3.1 at.% within our experimental conditions. The optimum field-effect mobility (mu(FE)), subthreshold swing (SS), threshold voltage (V-th), on-off current ratio (I-on/off) and the total interfacial trap states (N-t) are 3.9 cm(2)/V, 0.49 Vdec(-1), -0.4 V, 2.9 x 10(7) and 5.1 x 10(11) cm(-2). This work may pave the way for the development of lanthanides doped Sn-based thin film devices. (C) 2019 Elsevier B.V. All rights reserved.
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