Abstract:A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

Conformational Domain Wall Switch

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

Ferroelectric Domain-Wall Logic Units

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Ferroelectric Domain Wall Memristor

Charged ferroelectric domain walls for deterministic a.c. signal control

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO<sub>3</sub> Film

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

A Ferroelectric Domain-Wall Transistor

Electric Field Control of Multiferroic Domain Wall Motion

Domain-wall Nanoelectronics in Ferroelectric Memory

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO 3 Devices with an Oxide-Metal Interface

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Low-Voltage Domain-Wall LiNbO3 Memristors

Domain wall reactions in multiple-order parameter ferroelectrics

Charged Domain Wall Modulation of Resistive Switching with Large ON/OFF Ratios in High Density BiFeO3 Nano-Islands