Stacked Lateral Double-Diffused Metal-Oxide-semiconductor Field Effect Transistor with Enhanced Depletion Effect by Surface Substrate

Qi Li,Zhao-Yang Zhang,Hai-Ou Li,Tang-You Sun,Yong-He Chen,Yuan Zuo

DOI: https://doi.org/10.1088/1674-1056/28/3/037201

2019-01-01

Chinese Physics B

Abstract:A stacked lateral double-diffused metal–oxide–semiconductor field-effect transistor (LDMOS) with enhanced depletion effect by surface substrate is proposed (ST-LDMOS), which is compatible with the traditional CMOS processes. The new stacked structure is characterized by double substrates and surface dielectric trenches (SDT). The drift region is separated by the P-buried layer to form two vertically parallel devices. The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates, leading to a lower specific on-resistance (R on,sp). Multiple electric field peaks appear at the corners of the SDT, which improves the lateral electric field distribution and the breakdown voltage (BV). Compared to a conventional LDMOS (C-LDMOS), the BV in the ST-LDMOS increases from 259 V to 459 V, an improvement of 77.22%. The R on,sp decreases from 39.62 mΩcm2 to 23.24 mΩcm2 and the Baliga's figure of merit (FOM) of is 9.07 MW/cm2.