Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

On the Dynamic Behaviors of Silicon Single Crystal under Nanosecond Laser Irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Surface Damage Morphology Investigations of Silicon under Millisecond Laser Irradiation

The Interaction and the Surface Crack of Single-Crystal Silicon Induced by A Millisecond Laser

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser.

Linearly Scaling Molecular Dynamic Modeling to Simulate Picosecond Laser Ablation of a Silicon Carbide Crystal

The Damage Morphology of Momocrystal Silicon Irradiated by Continuous Wave Fiber Laser

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

Investigation of Wavelength Effects on Polycrystalline Silicon Damages Using Nanosecond Pulse Laser Irradiation

Analysis of Thermal Stress Damage in Single-Crystal Silicon Induced by 1064nm Long Pulse Laser

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Stress Damage Process of Silicon Wafer under Millisecond Laser Irradiation

Bulk Damage and Stress Behavior of Fused Silica Irradiated by Nanosecond Laser

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Subsurface Damage and Phase Transformation in Laser-Assisted Nanometric Cutting of Single Crystal Silicon

Laser-Induced Damage Threshold of Silicon in Millisecond, Nanosecond, and Picosecond Regimes

Irradiation Characteristics of Nanosecond Laser on Silicon under Vacuum Conditions

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Direct observation and quantification of nanosecond laser induced amorphization inside silicon