Abstract:VO2, which exhibits semiconductor-metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 C-degrees, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO2 triggered by laser. This study offers a blueprint for designing VO2/MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.

Photo-induced High Modulation Depth Terahertz Modulator Based on VOx–Si–VOxhybrid Structure

Terahertz Intensity Modulator Based on Low Current Controlled Vanadium Dioxide Composite Metamaterial

Multifield Controlled Terahertz Modulator Based on Silicon‐Vanadium Dioxide Hybrid Metasurface

Broadband Large-Modulation-depth Low-Current-triggered Terahertz Intensity Modulator Based on VO2 Embedded Hybrid Metamaterials

Terahertz Modulator Based on Insulator-Metal Transition in Photonic Crystal Waveguide

Modulator Design for THz Communication Based on Vanadium Dioxide Metasurface

Enhanced Photoresponses Of An Optically Driven Vo2-Based Terahertz Wave Modulator Near Percolation Threshold

Optical Pumping THz Modulators Based on VO2 Insulator-Metal Phase Transition

A flexible, multifunctional, active terahertz modulator with an ultra-low triggering threshold (vol 52, pg 631, 2020)

MEMS-actuated terahertz metamaterials driven by phase-transition materials

Photoinduced active terahertz metamaterials with nanostructured vanadium dioxide film deposited by sol-gel method.

Broadband and High Modulation-Depth THz Modulator Using Low Bias Controlled VO_2-integrated Metasurface

VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation.

All-optical broadband terahertz modulator based on CdS NWs/Si heterojunction and interface photoconductivity analysis

Vanadium Oxide Based Waveguide Modulator Integrated on Silicon

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

Near-perfect Terahertz Wave Amplitude Modulation Enabled by Impedance Matching in VO2 Thin Films

Design Optimization of Silicon-Based Optically Excited Terahertz Wave Modulation

Silicon-based Terahertz Modulation and its Mechanisms

Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film.

Flexible Terahertz Phase Shifter for Optically Controlled Polydimethylsiloxane-Vanadium Dioxide Composite Film