Near-perfect Terahertz Wave Amplitude Modulation Enabled by Impedance Matching in VO2 Thin Films

Liang-Hui Du,Hong-Fu Zhu,Jiang Li,Qi-Wu Shi,Li-Guo Zhu
DOI: https://doi.org/10.1063/1.5020930
2018-01-01
Abstract:We present a terahertz (THz) amplitude modulator with near perfect modulation depth based on the impedance matching method during the thermally induced insulator-metal transition (IMT) of VO2 thin films. It has been observed that the impedance matching-induced THz amplitude modulation was sensitive to the resistance switching characteristics of the VO2 thin films. With four orders of change in resistance of the properly designed VO2 films during the IMT, we experimentally achieved a near perfect THz modulator with an intensity modulation depth of 99.7% between the insulator phase of VO2 and the impedance matching state, and intensity modulation depth of 99.94% between the impedance matching state and the metallic phase of VO2. The experimental results were well explained by numerical simulations based on the transfer matrix model.
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