Comparison of ionization track structure models for electronic devices of different sizes

Jizhe Liu,Sha Yan,Jianming Xue,Yugang Wang
DOI: https://doi.org/10.1016/j.nimb.2019.01.031
2019-01-01
Abstract:The effect of the ionization track structure of the heavy ion deposited charge by direct ionization on the energy deposition calculation for single event upset (SEU) rate prediction is investigated using Geant4 based on Monte Carlo transport code. The limitations of using linear energy transfer (LET) as the single parameter to determine the energy deposited in the sensitive volume (SV) are analyzed. Track effects are becoming of great importance with technology downscaling. Three track structure models are summarized, and the applicability of track structure models for high energy ions (>8.0 MeV/amu) and low energy ions (<0.3 MeV/amu) with the same LET to devices of different sizes is discussed. It is revealed that the selection of an appropriate track structure model requires a comprehensive consideration of electronic device size and ion energy.
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