Abstract:Functional Materials Letters, Ahead of Print. In our study, we successfully demonstrated bipolar resistive switching in Resistive Random-Access Memory (RRAM) devices using MAPbI[math][math]Cl[math] mixed halide perovskite, thereby underscoring the immense potential of this material for future memory applications. By incorporating polyvinylpyrrolidone (PVP) into the device structure, which consists of MAPbI[math][math]Cl[math] sandwiched between top (Au) and bottom (ITO) electrodes, we achieved a remarkable morphological transition from elongated, needle-like structures to denser, more compact forms. This morphological evolution was pivotal in significantly lowering operational voltages, with "SET" and "RESET" voltages dramatically reduced from 7 V to 0.7 V and -2.2 V to -0.2 V, respectively. The incorporation of PVP proved to be a key factor in this achievement, as it enhanced charge transport within the device, minimized energy barriers, and markedly improved the dielectric properties of the perovskite material. These enhancements contributed directly to the observed reduction in switching voltages, marking a substantial leap forward in the quest for more efficient, stable, and low-power RRAM devices. Our research not only advances the field of memory technology but also emphasizes the critical aspects of reduced power consumption and the potential for enhanced device stability. This significant decrease in energy requirements, coupled with the prospect of increased device longevity, underscores the transformative impact of our findings, paving the way for the development of sustainable and reliable memory technologies that are well-suited to meet the demands of future electronic devices and systems.

High Performance and Mechanism of the Resistive Switching Device Based on Lead Halide Thin Films

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Investigation of Resistive Switching in Lead-Free Bismuth–silver Halide Double Perovskite

Resistive switching behaviors and mechanisms of HfS<sub>2</sub> film memory devices studied by experiments and density functional theory calculations

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Investigation of resistive switching behaviours in WO3-based RRAM devices

Rare earth halide double perovskites for high-performance resistive random access memory

Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

Multilevel Resistive Switching With Ionic And Metallic Filaments

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Controllable Extrinsic Ion Transport in Two-Dimensional Perovskite Films for Reproducible, Low-Voltage Resistive Switching

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory

Resistive switching mechanism of Cu doped ZrO2-based RRAM

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

Bipolar resistive switching in MAPbI[math]Cl[math] mixed halide perovskite with polyvinylpyrrolidone additives