A Flexible Way to Modulate the Detection Range of Anisotropic Magnetoresistance by Exchange Bias Field

XiaoLi Tang,Wei Du,JinBiao Yu,HuaiWu Zhang,Hua Su
DOI: https://doi.org/10.1016/j.jmmm.2019.01.012
IF: 3.097
2019-01-01
Journal of Magnetism and Magnetic Materials
Abstract:A series of Ta/FeMn/[NiFe/FeMn](n)/Ta films was grown through DC-sputtering. They acted as a new structure of multilayer anisotropic magnetoresistance (AMR). Based on the exchange bias (EB) field producing at the NiFe/FeMn interface, the linear range and saturation field along the multilayer's hard axis enlarged when compared with a single NiFe layer. The linear range and saturation field decided the detection range of the AMR. Therefore, by fixing the total thickness of magnetic NiFe layer and selecting different number of n in multilayer, each thickness of NiFe layer was changed to tune EB field. Then, the detection range was modulated by varying exchange bias fields. Adopting this method, the detection range could be easy to control and adjustable from 20.5 Gs to 116 Gs on the basis of AMR responses. The proposed method promotes the application of the AMR effect over a wide magnetic detection area.
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