Bending strain tailored exchange bias in epitaxial NiMn/ γ ′-Fe 4 N bilayers

Xiaohui Shi,Wenbo Mi,Qiang Zhang,Xixiang Zhang
DOI: https://doi.org/10.1063/5.0018261
IF: 4
2020-09-28
Applied Physics Letters
Abstract:The strain tunable exchange bias has attracted much attention due to its practical applications in flexible and wearable spintronic devices. Here, the flexible epitaxial NiMn/<i>γ</i>′-Fe<sub>4</sub>N bilayers are deposited by facing-target reactive sputtering. The maximum strain-induced change ratios of exchange bias field <i>H</i><sub>EB</sub> and coercivity <i>H</i><sub>C</sub> (|Δ<i>H</i><sub>EB</sub>/<i>H</i><sub>EB</sub>| and |Δ<i>H</i><sub>C</sub>/<i>H</i><sub>C</sub>|) are 51% and 22%, respectively. A large strain-induced |Δ<i>H</i><sub>EB</sub>/<i>H</i><sub>EB</sub>| appears in a thicker ferromagnetic layer, but a large |Δ<i>H</i><sub>C</sub>/<i>H</i><sub>C</sub>|) appears in a thinner ferromagnetic layer. At a compressive strain, the antiferromagnetic anisotropy of the tetragonal NiMn layer increases, resulting in an increased <i>H</i><sub>C</sub> of NiMn/<i>γ</i>′-Fe<sub>4</sub>N bilayers. The bending-strain induced changes of anisotropy magnetoresistance and planar Hall resistance are also observed at low magnetic fields. The bending-strain tailored magnetic properties can be ascribed to the distributions of ferromagnetic and antiferromagnetic anisotropies.
physics, applied
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