Enhancing the Performance of Photomultiplication-Type Organic Photodetectors Using Solution-Processed ZnO As an Interfacial Layer

Jianbin Wang,Qingdong Zheng

DOI: https://doi.org/10.1039/c8tc04962a

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:In comparison with PEDOT:PSS-based OPDs, ZnO-based OPDs show a broader spectral-response range with enhanced EQE, responsivity and detectivity.

What problem does this paper attempt to address?

Enhancing performance of organic photovoltaic and photodetector devices using non-atomically doped ZnO electrodes with superior optical properties

Ziqi Su,Hailin Pan,Yi Lin,Zheng Li,Ming Wang,Zaifei Ma

DOI: https://doi.org/10.1039/d4tc01324g

IF: 6.4

2024-06-27

Journal of Materials Chemistry C

Abstract:Organic photovoltaics (OPVs) and photodetectors (OPDs) are valued for their lightweight, low-cost, and flexible nature, with recent advancements in materials improving device performance. Transparent electrodes play a critical role in these devices, requiring high conductivity and broad spectral transmittance. Conventional indium tin oxide (ITO) faces scarcity issues, spurring exploration of alternatives. Here, we introduce non-atomically doped (NAD) ZnO electrodes with exceptional near-infrared (NIR) transmittance, fabricated via a sol–gel method. We investigate their performance in OPVs and OPDs using three different bulk heterojunction systems. Results reveal ZnO-based devices exhibit heightened short-circuit current density ( J sc ) compared to ITO-based ones under solar illumination. Despite slightly lower power conversion efficiency (PCE) due to higher series resistance, NAD-ZnO devices show resilience under LED illumination, outperforming ITO-based devices. Furthermore, photodiode OPD devices utilizing NAD-ZnO electrodes demonstrate significantly enhanced specific detectivity ( D *) across all the three systems, indicating their potential for OPD applications. Overall, the superior optical properties and device performance of NAD-ZnO electrodes highlight their promise as replacements for ITO electrodes in organic optoelectronic devices.

materials science, multidisciplinary,physics, applied
Improved performance of ZnO based inverted organic photodetectors with morphological and interfacial modification

Xiaoya Hou,Kun Zhang,Jinxiao Li,Jingchong Liang,Wanli Li,Dawei Yan,Lei Liu,Jie Zhang

DOI: https://doi.org/10.1039/d3tc00989k

IF: 6.4

2023-05-30

Journal of Materials Chemistry C

Abstract:In order to achieve organic photodetectors with high performance for health detection, ZnO-based inverted organic photodetectors using PTB7-Th:PC61BM as the active layer were fabricated with the morphological and interfacial modification. Using chlorobenzene instead of 1, 2-dichlorobenzene as the solvent, the active layer spin-coated on pristine ZnO layer exhibited more uniform phase separation, which was favorable for charge tranport and charge collection. The dark current density and external quantum efficiency could be effectively regulated by changing the active layer thickness, the annealing temperature and the applied bias. When ZnO was modified with ethylene glycol (EG), the valence band maximum of ZnO decreased and the potential barrier of hole injection from indium tin oxide electrode increased, resulting in a lower dark current density of ZnO/EG based devices. The improved external quantum efficiency and reduced dark current density of ZnO/EG based organic photodetectors were attributed to the amount of traps reduction by capacitance-frequency curve, charge transfer resistance increase by impedance analysis and charge doping density reduction by Mott−Schottky analysis. Compared to pristine ZnO based organic photodetectors, the dark current density of ZnO/EG based was reduced to 7.85*10-9 A/cm2 by almost two orders magnitude. Eventually, inverted ZnO/EG based organic photodetectors achieved a high specific detectivity of up to 9.11*1012 Jones and fast response as low as 1 μs, which had great potential application in health detection.

materials science, multidisciplinary,physics, applied
Strategies for achieving high-performance photomultiplication-type organic photodetectors and their promising applications

Jianbin Wang,Ziyang Liu,Tongqing Zhu,Zhenjing Kang,Xiahui Zeng,Bi Zhou,Yingwu Zhou,Jiuke Mu,Zhigang Yin

DOI: https://doi.org/10.1016/j.nanoen.2024.110399

IF: 17.6

2024-10-30

Nano Energy

Abstract:Organic photodetectors (OPDs) are promising for light detection, sensing, imaging, and flexible wearable applications due to their advantages, including tunable spectral response, excellent flexibility, and large-area solution processability. However, traditional OPDs often suffer from low photocurrents and external quantum efficiencies (EQEs) below 100 %, making them susceptible to noise signal interference. A promising solution to this limitation is the development of photomultiplication-type OPDs (PMOPDs), which can self-amplify photocurrents under illumination and applied bias without the need for an external amplification circuit. This function enables PMOPDs to achieve EQEs far exceeding 100 %, demonstrating significant potential for academic research and industrial applications. Here, this review comprehensively discusses the fundamentals and latest advancements in high-performance PMOPDs. It starts with a description of device structures, working principles, and key performance parameters of PMOPDs. Then, significant strategies of designing photosensitive active layers (including binary, multicomponent, and stacked structures) and electrode interface layers, as well as their effects on the performance of PMOPDs are discussed in detail. The effectiveness of these strategies in enhancing EQEs, reducing dark currents, and optimizing spectral responses of PMOPDs is systematically summarized. Moreover, applications of PMOPDs in various fields such as weak light detection, single-pixel imaging, flexible wearable electronics and health monitoring are further discussed. Finally, the concluding remarks and perspectives on the development of PMOPDs are presented, along with insights into future opportunities and challenges in this rapidly evolving field.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Enhanced Photomultiplication of Organic Photodetectors Via Phosphorescent Material Incorporation

Jian Wang,Ming Liu,Jun Chen,Jae Hoon Son,Sang Young Jeong,Jing Xiao,Liang Chen,Kaixuan Yang,Zijin Zhao,Han Young Woo,Xiaoli Zhang,Fujun Zhang

DOI: https://doi.org/10.1039/d1tc04524e

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The key performance parameters of PM-OPDs were markedly enhanced by introducing the phosphorescent material FIrpic in the active layer, and the corresponding device exhibited high-quality imaging by utilizing imaging systems without current preamplifiers.
Preparation and performance enhancement study of organic ZnO/Au/PEDOT:PSS heterojunction UV photodetector

Siyuan Weng,Man Zhao,Dayong Jiang

DOI: https://doi.org/10.1007/s10854-022-07704-0

2022-01-13

Abstract:Organic/inorganic hybrid material properties and their interfaces are essential to obtain excellent device performance. In this paper, an heterojunction ultraviolet (UV) organic photodetector (OPD) based on organic/inorganic zinc oxide (ZnO)/aurum (Au)/poly (3,4-ethylenedioxythio-phene):poly(4-styrene-sulfonate) (PEDOT:PSS) was manufactured and display outstanding photoelectric performance. For the fabrication of ZnO/Au/PEDOT:PSS heterojunction UV OPD, this heterojunction exhibits excellent UV optical detection performance. And further analysis using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), energy dispersive X-ray (EDX) and atomic force microscope (AFM). Compared with ZnO UV PD, the responsivity of ZnO/Au/PEDOT:PSS heterojunction UV OPD reaches 0.181 A W−1, which is about 3.69 times higher. Furthermore, ZnO/Au/PEDOT:PSS heterojunction UV OPD shows light-to-dark current ratio (Ilight/Idark) (1.19 × 103), external quantum efficiency (EQE) (59%), detectivity (D*) (1.39 × 1011 Jones) and linear dynamic range (LDR) (61.5 dB). The preparation of inorganic/organic ZnO/Au/PEDOT:PSS heterojunction UV OPD in this work exhibits small organic/inorganic stress at the heterojunction, which provides new insights for the research of organic/inorganic hybrid UV OPDs and application prospects.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Improving Performance of Organic Photodetectors Based on Trap Assisted Photomultiplication Through Adjusting Photogenerated Carrier Distributions

Wenyan Wang,Linlin Shi,Ye Zhang,Yuying Hao,Furong Zhu,Kaiying Wang,Yanxia Cui

DOI: https://doi.org/10.48550/arxiv.1902.07202

2019-01-01

Abstract:Organic photodetectors (OPDs) based on trap-assisted photomultiplication (PM) effect with external quantum efficiency (EQE) far exceeding 100 appealing for achieving highly sensitive photodetection. A classic structure of PM-type OPDs is based on the active layer of P3HT:PC70BM with the weight ratio of 100:1, in which PC70BM forms islands and supply bulk electron traps for inducing strong interfacial band bending and thus hole tunneling from the Al electrode. In this paper, aiming for optimizing the PM effect, we study the photogenerated carrier distribution by tuning thickness of the active layer (P3HT:PC70BM). The combination effect of both the exciton generation and exciton dissociation processes affects the photogenerated carrier distribution, which ultimately determines the PM performances of OPDs. On the one hand, simulation reveals that the thinner the active layer, the stronger exciton generation near the Al electrode. On the other hand, the photoluminescence and surface morphology studies reflect that the active layer with thickness of 230 nm has the smooth surface and produces the highest exciton dissociation rate. The two effects result in the OPD with a 205 nm thick active layer has the champion EQE (105569 enhancement of 330 Ascribed to the trade off of EQE and dark current, the detectivity performs differently at different wavelength ranges. At short wavelength range, the detectivity reaches the highest when the active layer is 205 nm thick, while the highest detectivity at long wavelength range is produced by the thickest active layer. Our work contributes to developing low cost organic photodetectors for detecting weak light signals.
Inorganic Nanoparticles and Interface Layer Synergistically Improve Performance of Near-infrared Organic Photomultiplication Photodetector

CHANG Mingru,SHI Linlin,HUA Yulu,JI Ting,LI Guohui,XU Bingshe,DONG Hailiang,CUI Yanxia

DOI: https://doi.org/10.37188/cjl.20240056

2024-01-01

Chinese Journal of Luminescence

Abstract:Novel near-infrared organic photodetectors have wide application prospects in biosensing,medical imag-ing,and wearable electronics with the advantages of low cost,solution-spin coating,good biocompatibility,and flexible.Compared with diode organic photodetectors,high sensitive photomultiplication organic photodetectors have attracted enormous attention because of their higher external quantum efficiency(EQE>100%).The mechanism of the photo-multiplication involves a type of carrier being trapped near the electrode,which assists another opposite polarity carri-er tunneling into the active layer from the extra circuit.However,the performances of the device are limited by the number of traps.In this work,inorganic ZnO nanoparticles(NPs)are added into the active layer to enhance the pho-tocurrent of the device through increasing the number of electron traps,and fortunately the dark current density of the device is maintained.It is found that the photocurrent of the device is improved by 7.4 times with optimal 5%ZnO NPs,compared with control device without ZnO NPs,under the reverse bias of-15 V,850 nm illumination.Be-sides,the Al2O3 interface modification layer is further inserted into the device to improve performance of the device.The results show that the Al2O3 based device has bi-direction response for both reverse and forward bias via changing the interface contact characteristics near anode.Ultimately,the device obtains high EQE and R up to 105%and 104 A/W at a broad wavelength range of 380-1 310 nm,applied with a forward bias of 15 V.This work provides a new idea and method for the development of high-sensitivity organic photodetectors.
Facile light exposure of zinc oxide via interfacial engineering for boosting responsivity and detectivity in organic photodetectors

Jihyun Lim,Woongsik Jang,Junmin Lee,Ji Yun Chun,Dong Hwan Wang

DOI: https://doi.org/10.1039/d3qi00127j

IF: 7.779

2023-04-02

Inorganic Chemistry Frontiers

Abstract:This study is the results contributing to the effective detectivity improvement of PM6:Y6-based inverted self-powered organic photodetectors (OPDs) through interfacial treatment of ZnO, which is widely used as an electron transport layer. ZnO has excellent charge mobility, but reacts with oxygen on the surface due to photocatalysis to decompose conjugated bonds in organic semiconductors, thereby deteriorating devices stability. However, by adjusting the photoreactivity, the oxygen vacancies on the surface were filled through ZnO exposure treatment to confirm the effect of interfacial modification and work function control induction. The light exposure treatment was optimized for 15 minutes, and the surface of the light exposed ZnO layer showed a smooth morphology, which also reduced the roughness of the PM6:Y6 active layer, which formed efficient charge transport and limited recombination. In addition, as the valence band of ZnO shifts deep through light exposure treatment at the interface with the active layer, the hole injection barrier is enhanced, effectively suppressing the dark current at the reverse voltage. Based on the suppressed dark current, the detectivity was improved by 3.9 times compared to the pristine device to 1.21 x 1014 Jones at 0V, and an improved photoresponse speed of 0.88 μs was also shown. In particular, the modified interface and energy level control effectively suppressed the noise current of the OPD, and showed a high signal-to-noise of 51.9 dB. As a result, the light exposure treatment of ZnO is optimized in a facile way based on the characteristics of ZnO, and suggests interpretation and results from a new perspective that turned the disadvantages into advantages.

chemistry, inorganic & nuclear
High-Performance Polymer Photodetector Using the Non-Thermal-and-Non-Ultraviolet-Ozone-Treated SnO 2 Interfacial Layer

Rui Deng,Chao Yan,Yadan Deng,Yufeng Hu,Zhenbo Deng,Qiuhong Cui,Zhidong Lou,Yanbing Hou,Feng Teng

DOI: https://doi.org/10.1002/pssr.201900531

2020-01-01

Abstract:In organic or perovskite photovoltaic‐type devices, to improve device performance, the thermal and ultraviolet–ozone (UVO) treatments are usually critical for the metal oxide film fabrication by removing the interfacial layer induced defects. However, the defects might play the opposite role in photoconductive photodetectors, where the defect‐induced photogenerated charge accumulation can lead to a tunneling current. Herein, a high‐performance solution‐processed broadband organic photodetector (OPD) in the visible wavelength is realized and characterized by introducing the non‐thermal‐and‐non‐UVO‐treated SnO 2 nanoparticle film between the indium tin oxide (ITO) electrode and the active layer of the poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric‐acid‐methyl‐ester (PC 61 BM) blend. The untreated SnO 2 nanoparticle layer can efficiently block the external charge injection, which considerably reduces the dark current density. Under illumination, the photogenerated charges are accumulated at the interface between the SnO 2 layer and the active layer, and thus contribute a tunneling injection, resulting in a significantly high photocurrent. Therefore, the OPD shows a high performance in every figure of merit: external quantum efficiency (EQE) of 1430%, responsivity of 6.97 A W −1 , detectivity of 2.29 × 10 13 Jones, and −3 dB bandwidth of 2.8 MHz. The solution‐processed high‐performance photodetectors without thermal and UVO treatments are highly compatible with low cost, flexible, and large‐area electronics.
Effect of Photogenerated Carrier Distribution on Performance Enhancement of Photomultiplication Organic Photodetectors

Wenyan Wang,Linlin Shi,Ye Zhang,Guohui Li,Yuying Hao,Furong Zhu,Kaiying Wang,Yanxia Cui

DOI: https://doi.org/10.1016/j.orgel.2019.01.055

IF: 3.868

2019-01-01

Organic Electronics

Abstract:The trap-assisted photomultiplication (PM) organic photodetectors (OPDs) are very attractive for achieving high sensitivity photodetection, with external quantum efficiency (EQE) in excess of 100%. A classic structure of PM-type OPDs has a poly-3-hexylthiophene (P3HT): Phenyl-C-70 -butyric acid methyl ester (PC70BM) blend active layer, made with the weight ratio of P3HT to PC7OBM of 100:1. The presence of a low PC7OBM content in the P3HT:PC70BM blend layer forms isolated PC7OBM domains serving as the defect sites to trap the photogenerated electrons. The trapped electrons induce a strong interfacial band bending at the organic/metal contact (Al) interface assisting in an enhanced hole injection via tunneling effect. In this work, we report a comprehensive study to understand the effect of the distribution of the photogenerated charge carriers on performance of the PM OPDs, made with a P3HT:PC70BM active layer with different layer thicknesses, for optimizing the PM effect. The combination effect of both the exciton generation and carrier loss properties affects the distribution of the photogenerated charge carriers and hence the PM processes in the OPDs. The optical properties of the PM OPDs were simulated. It reveals that a stronger exciton generation occurs near the organic/Al interface in PM OPD with a thinner active layer. The photoluminescence and surface morphology measurements suggested that a 230 nm thick active layer with a smooth surface had the lowest nonradiative loss. An optimal EQE of 105569% and a photoresponsivity of 344 A/W were obtained for a PM OPD with a 205 nm thick active layer, which are about 330% higher than that of the OPD with a 325 nm thick active layer. Due to the tradeoff between EQE and dark current, the OPD with a thin active layer (205 nm) yields a maximum detectivity of 1.87 x 10(13) Jones at the short wavelength range while the OPD with a thick active layer (325 nm) has the highest detectivity of 2.32 x 10(13) Jones at the long wavelength range. Our work contributes to the development of high performance low-cost PM OPDs for detecting weak light signals.
Photomultiplication Type Broad Response Organic Photodetectors with One Absorber Layer and One Multiplication Layer.

Zijin Zhao,Jian Wang,Chunyu Xu,Kaixuan Yang,Fenggui Zhao,Kai Wang,Xiaoli Zhang,Fujun Zhang

DOI: https://doi.org/10.1021/acs.jpclett.9b03323

2019-01-01

Abstract:Broad response organic photodetectors (OPDs) with a photomultiplication (PM) effect are achieved with one absorber layer and one multiplication layer. The response range of the PM-OPDs is primarily determined by materials in the absorber layer, and the external quantum efficiency (EQE) of the PM-OPDs is mainly controlled by the multiplication layer. Here, double-layered PM-OPDs were designed with an ITO/ZnO/PM6:Y6/PC71BM:P3HT (100:5, w/w)/Au structure, where PM6:Y6 is employed as an absorber layer and PC71BM:P3HT is used as a multiplication layer. The optimal PM-OPDs exhibit a broad response covering 350-950 nm. Meanwhile, the optimal PM-OPDs exhibit the largest EQE value of similar to 1200% and a maximum specific detectivity (D*) of similar to 6.8 x 10(-12) cm Hz(1/2) W-1 under a 10 V bias. This double-layered approach may be a smart strategy for realizing PM-OPDs with an easily adjustable response range.
High Sensitivity and Fast Response Sol-Gel ZnO Electrode Buffer Layer Based Organic Photodetectors with Large Linear Dynamic Range at Low Operating Voltage

Tiening Wang,Yue Wang,Lijie Zhu,Longfeng Lv,Yufeng Hu,Zhenbo Deng,Qiuhong Cui,Zhidong Lou,Yanbing Hou,Feng Teng

DOI: https://doi.org/10.1016/j.orgel.2018.01.033

IF: 3.868

2018-01-01

Organic Electronics

Abstract:In this work, we demonstrate high sensitive organic photodetectors (OPDs) by incorporating the common sol-gel processed ZnO film between the ITO electrode and the polymer: fullerene active layer. The device requires a low negative working voltage to exhibit fast response and broad linear dynamic range (LDR), and the external quantum efficiency (EQE) of the devices can exceed 100%. The sol-gel ZnO layer can efficiently block the external charge injection from the ITO electrode to the active layer, which dramatically reduces the dark current density. Two kind devices (ITO/ZnO/P3HT: PC61BM/Al and ITO/ZnO/PTB7: PC71BM/Ag) are demonstrated and their dark current densities are effectively reduced from 0.07 mA/cm(2) to 8.16x10(-5) mA/cm(2) and from 0.75 mA/cm(2) to 6.50x10(-5) mA/cm(2) at -0.5 V, respectively. Although the two kind devices show the comparable characteristics, the transient photocurrent and capacitance-voltage (C-V) measurements indicate the two different working mechanisms related. Under illumination, in the P3HT: PC61BM based devices, some surface defect states of ZnO can be occupied and the photogenerated charges accumulate around the interface between the ZnO layer and the active layer, which contribute a tunneling injection under the applied reverse bias. While in the PTB7: PC71BM based devices, the photogenerated charges rapidly transport to the corresponding electrodes and then be collected under reverse bias. The different working mechanisms lead to the various device performances. The OPDs based on P3HT: PC61BM exhibit a higher EQE of more than 200% (460 nm - 600 nm) at -0.5 V, while the PTB7: PC71BM based devices show a more than 1.0x10(15) Jones detectivity (390 nm 730 nm) and achieve the over 110 dB linear dynamic range (LDR) under the different monochromatic illuminations at -0.5 V.
High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO2 Interfacial Layer

Rui Deng,Chao Yan,Yadan Deng,Yufeng Hu,Zhenbo Deng,Qiuhong Cui,Zhidong Lou,Yanbing Hou,Feng Teng

DOI: https://doi.org/10.1002/pssr.201900531

2019-01-01

Abstract:In organic or perovskite photovoltaic‐type devices, to improve device performance, the thermal and ultraviolet–ozone (UVO) treatments are usually critical for the metal oxide film fabrication by removing the interfacial layer induced defects. However, the defects might play the opposite role in photoconductive photodetectors, where the defect‐induced photogenerated charge accumulation can lead to a tunneling current. Herein, a high‐performance solution‐processed broadband organic photodetector (OPD) in the visible wavelength is realized and characterized by introducing the non‐thermal‐and‐non‐UVO‐treated SnO2 nanoparticle film between the indium tin oxide (ITO) electrode and the active layer of the poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric‐acid‐methyl‐ester (PC61BM) blend. The untreated SnO2 nanoparticle layer can efficiently block the external charge injection, which considerably reduces the dark current density. Under illumination, the photogenerated charges are accumulated at the interface between the SnO2 layer and the active layer, and thus contribute a tunneling injection, resulting in a significantly high photocurrent. Therefore, the OPD shows a high performance in every figure of merit: external quantum efficiency (EQE) of 1430%, responsivity of 6.97 A W−1, detectivity of 2.29 × 1013 Jones, and −3 dB bandwidth of 2.8 MHz. The solution‐processed high‐performance photodetectors without thermal and UVO treatments are highly compatible with low cost, flexible, and large‐area electronics.
Optimizing electron injection barriers and hole-trapping ability for high-performance photomultiplication-type ternary organic photodetectors

Jiang Huang,Qingshan Fan,Ziheng Jin,Hanqing Zhang,Zifan Dou,Meiling Wang,Jian Li,Lin Xu,Guanrui Zhou,Ting Zhang,Shi Chen

DOI: https://doi.org/10.1063/5.0181922

IF: 2.877

2024-02-08

Journal of Applied Physics

Abstract:Photomultiplication-type organic photodetectors (PM-OPDs) have been stimulating more and more researchers' interest owing to their extremely high external quantum efficiency (EQE). To prepare high-performance PM-OPDs with a broadband spectral response range from visible to near-infrared and investigate the role of energy levels of the donor and acceptor on its responsiveness, the non-fullerene acceptor Y6 was added into the P3HT:PC71BM system in this work. The photomultiplication phenomenon with the highest EQE has been achieved under both forward and reverse bias when the ratio of Y6 in two acceptors approaches 80 wt. %. The introduction of Y6 not only promotes the formation of moderate hole traps in the active layer but also results in an appropriate amount of low injection barriers to allow more electron injection from the external circuit. Therefore, the spectral response of the device with 80 wt. % Y6 has been broadened from 750 to 950 nm, and the champion EQE of 15 691% at 10 V and 7639% at −20 V at 850 nm was achieved. This work reveals the importance of hole-trapping ability determined by the energy level difference between the donor and the acceptor for the selection of the multiplication system and provides a scheme for the design of high-performance broadband PM-OPDs.

physics, applied
Dual-Band Photomultiplication-Type Organic Photodetectors with Ultrahigh Signal-to-Noise Ratios

Xingchao Zhao,Ming Liu,Jian Wang,Kaixuan Yang,Haolan Zhang,Sang Young Jeong,Xiaoling Ma,Han Young Woo,Fujun Zhang

DOI: https://doi.org/10.1021/acsami.4c05558

IF: 9.5

2024-06-26

ACS Applied Materials & Interfaces

Abstract:A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band...

materials science, multidisciplinary,nanoscience & nanotechnology
Interfacial Engineering for Photomultiplication Type Organic Photodetectors with Signal‐Noise‐Ratio over 89 000

Ming Liu,Qi Yao,Shipei Li,Yunke Qin,Sang Young Jeong,Yao Ma,Liang Shen,Xiaoling Ma,Kaixuan Yang,Guangcai Yuan,Han Young Woo,Fujun Zhang

DOI: https://doi.org/10.1002/adom.202303216

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:Photomultiplication type organic photodetectors (PM-OPDs) exhibit obvious superiority in weak light detection due to their low dark current density (JD) and large photo-induced current density (JPI). The JD is one of the important parameters that influences light detection sensitivity of PM-OPDs, how to effectively suppress the JD is a great challenge to improve the performance of PM-OPDs. In this work, the JD of PM-OPDs can be suppressed by employing PTAA or doped-PTAA as the interfacial layer replacing PEDOT:PSS layer. The PM-OPDs with PTAA layer exhibit a low JD of 2.3 x 10-7 A cm-2 under -6 V bias, which is much smaller than 1.4 x 10-6 A cm-2 for PM-OPDs with PEDOT:PSS layer. The small molecule DRCN5T is incorporated into PTAA to further passivate surficial defects of PTAA films, which is conducive to reducing the leakage current of PM-OPDs. The optimal PM-OPDs exhibit rather low JD of 8.4 x 10-8 A cm-2 under -6 V bias, as well as external quantum efficiency (EQE) of 31700% and specific detectivity (D*) of 1.2 x 1013 Jones at 370 nm. The signal-noise-ratio of optimal PM-OPDs arrives to 89600 under -4.5 V bias under white light illumination with intensity of 1.5 mW cm-2. The dark current density (JD) as one important parameter determines the light detection sensitivity of PM-OPDs, which can be suppressed by employing interfacial engineering. The optimal PM-OPDs exhibit a rather low JD of 8.4 x 10-8 A cm-2 under -6 V bias. The maximum EQE value of 31700% is achieved in PM-OPDs under -6 V bias, accompanied with large signal-noise-ratio of 89600. image
Enhanced Performance of Near Infrared and Broad Spectral Response Organic Photodiodes Exploiting NPB As Electron Blocking Layer

Xinda Chen,Ziqiang Xu,Yingquan Peng,Wenli Lv,Rongzheng Ding,Sunan Xu,Lei Sun

DOI: https://doi.org/10.1016/j.infrared.2019.103001

IF: 2.997

2019-01-01

Infrared Physics & Technology

Abstract:Near infrared (NIR) and broad spectral (BS) responsive organic photodiodes (OPDs) have broad application prospects because of their unique characteristics. In order to fabricate excellent devices, suppressing dark currents under reverse bias is a key indicator to improve the performance of OPDs. Here we report a NIR-OPD and a BS-OPD exploiting NPB as electron blocking layer which can effectively suppressed the dark current of the devices. For the NIR-OPD, a decrease of 61% for the dark current has achieved at an optimized NPB thickness of 10 nm, and the performance are improved accordingly. Compare with no NPB device, the photoresponsivity (R), specific detectivity (D*) and external quantum efficiency (EQE) increase probably 25%, 100% and 25% under 780 nm wavelength irradiation, respectively. For the BS-OPD, the effects of the mixture ratio of the SnPc:PTCDA bulk heterojunction has been investigated, where SnPc denotes Tin(II) phthalocyanine and PTCDA denotes 3,4,9,10-perylenete-acarboxylic dianhydride. The results show that at the ratio of 3:2, the photo responsivity is maximal. At this optimized mixture ratio, the R, D* and EQE of the device improved at least 250%, 61% and 78%, respectively.
Recent progress on photomultiplication type organic photodetectors

Li Zijian,Yang Yanfei,Wu Yun,Wang Yue,Zhang Xiangtong,Wang Lei,Liu Lina,Cunxia Li,Li Lianbi,Xia Caijuan,Han Xiaoxiang,Zhang Guoqing

DOI: https://doi.org/10.1088/1361-6463/ad983d

2024-11-29

Journal of Physics D Applied Physics

Abstract:Photodetectors are critical components for various electronic applications. Compared with traditional photodetectors based on inorganic materials, organic photodetectors have received an increasing amount of attention because of the features of tunable energy levels, solution-preparation, and flexibility. Owing to higher exciton binding energy and smaller carrier mobility, it is impossible to obtain photomultiplication type organic photodetectors (PM-OPDs) directly using the same working mechanism of avalanche photodiodes or photomultiplier tubes. This review details the latest strategies for realizing the photomultiplication phenomenon in organic photodetectors including doping to introduce traps, acceptor materials as traps, and the introduction of interfacial blocking layers. Afterwards, we detail the tuning strategies of the response spectra range of the PM-OPDs for different application scenarios.

physics, applied
Photomultiplication Type Organic Photodetectors with Tunable Spectral Response Range

Zijin Zhao,Jian Wang,Jianli Miao,Fujun Zhang

DOI: https://doi.org/10.1016/j.orgel.2019.03.055

IF: 3.868

2019-01-01

Organic Electronics

Abstract:Photomultiplication (PM) type organic photodetectors (OPDs) with two detection windows were fabricated with a specific structure of ITO/PDIN/active layers/semitransparent Al, only holes can be transported in the active layers with 100:1 wt ratio of P3HT to PC61BM. The specific structure makes the PM type OPDs working under top/bottom light illumination and forward/reverse bias conditions, exhibiting a tunable spectral response range. The rather less PC61BM may prefer to be surrounded by P3HT to form some isolated electron traps in the active layers, which is beneficial to decreasing the dark current density (J(D)) of OPDs with hole-only transport channels provided by P3HT. Under dark condition, holes are hardly injected from ITO/PDIN or Al electrode to the highest occupied molecular orbits (HOMO) of P3HT due to the large interfacial injection barriers, resulting in the rather low J(D). Holes can be easily injected from electrodes due to the trap-assisted interfacial band bending under light illumination conditions. The external quantum efficiency (EQE) spectra of PM type OPDs are determined by the photogenerated electron distribution on the cross-section near electrode, which can be well supported by the corresponding simulation results based on transfer matrix method. The PM type OPDs integrated with two detection windows exhibit broadband and narrowband response range under forward or reverse bias, which should have great potential in the integrated optoelectronic products, especially in the field of artificial intelligence.
High-performance UV–visible photodetectors based on ZnO/perovskite heterostructures

Yanyan Peng,Dayong Jiang,Man Zhao,Yuhan Duan,Haoming Wei,Haoda Li,Qingcheng Liang,Shiwei Wang

DOI: https://doi.org/10.1016/j.jallcom.2023.171372

IF: 6.2

2023-07-21

Journal of Alloys and Compounds

Abstract:In recent years, the combination of perovskite with other materials to improve the optoelectronic performance and detection range has received widespread attention. In this paper, ZnO/perovskite heterostructure photodetectors were prepared by sputtering and sol-gel spin-coating method. ZnO/perovskite photodetector exhibits superior photoelectric performance over a wide detection range from UV to visible compared to ZnO and perovskite photodetector. Under 360 nm illumination, the detection performance is higher than ZnO and perovskite photodetector, with responsivity of 2.73 A/W, light-to-dark current ratio of 5.88 × 10 4 , a detectability of 1.09 × 10 12 Jones, and an external quantum efficiency of 940.86 %. Meanwhile, perovskite combined with ZnO, the device has higher light-to-dark ratio, responsivity and detectivity than perovskite photodetector in the visible region of 550 and 750 nm. The heterojunction formed by ZnO and perovskite, which has a built-in electric field, thus reducing the dark current, reducing carrier recombination and enhancing the photovoltaic performance. The responsivity of the device slightly decreases after being placed in the atmosphere for 10 days. This study provides a basis for the preparation of heterojunction photodetectors with high optoelectronic performance.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering

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