Abstract:Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe2 triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe2 nucleates, in agreement with the observation of a higher nucleation density of WSe2 on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSex molecules, leading to the higher nucleation density of WSe2 on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe2/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.

Termination-dependent Edge States of MBE-grown WSe2

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2-MoSe2 lateral heterojunctions

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Experimental and Theoretical Evidence for the Ferromagnetic Edge in WSe2nanosheets

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

One Dimensional Metallic Edges in Atomically Thin WSe 2 Induced by Air Exposure

Edge States at Nematic Domain Walls in FeSe Films.

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

Epitaxial Growth of Single‐Phase 1t'‐wse2 Monolayer with Assistance of Enhanced Interface Interaction

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers

WSe2 Homojunctions and Quantum Dots Created by Patterned Hydrogenation of Epitaxial Graphene Substrates

Epitaxial Growth of Single‐Phase 1T'‐WSe 2 Monolayer with Assistance of Enhanced Interface Interaction

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers