Abstract:The beneficial effect of the alkali metals such as Na and K on the Cu(In,Ga)Se-2 (CIGS) and Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells has been extensively investigated in the past two decades, however, in most of the studies the alkali metals were treated as dopants. Several recent studies have showed that the alkali metals may not only act as dopants but also form secondary phases in the absorber layer or on the surfaces of the films. Using the first-principles calculations, we screened out the most probable secondary phases of Na and K in CIGS and CZTSSe, and studied their electronic structures and optical properties. We found that all these alkali chalcogenide compounds have larger band gaps and lower VBM levels than CIGS and CZTSSe, because the existence of strong p-d coupling in CIS and CZTS pushes the valence band maximum (VBM) level up and reduces the band-gaps, while there is no such p-d coupling in these alkali chalcogenides. This band alignment repels the photo-generated holes from the secondary phases and prevents the electron-hole recombination. Moreover, the study on the optical properties of the secondary phases showed that the absorption coefficients of these alkali chalcogenides are much lower than those of CIGS and CZTSSe in the energy range of 0-3.4eV, which means that the alkali chalcogenides may not influence the absorption of solar light. Since the alkali metal dopants can passivate the grain boundaries and increase the hole carrier concentration, and meanwhile their related secondary phases have innocuous effect on the optical absorption and band alignment, we can understand why the alkali metal dopants can improve the CIGS and CZTSSe solar cell performance. (C) 2017 Science Pressand Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.

General Rules of the Sub-Band Gaps in Group-Iv (si, Ge, and Sn)-doped I-III-VI2-type Chalcopyrite Compounds for Intermediate Band Solar Cell: A First-Principles Study

Intermediate Band Solar Cell Materials Through the Doping of Group-Va Elements (N, P, As and Sb) in Cu2ZnSiSe4.

Natural Intermediate Band in I 2 -II-IV-VI4 Quaternary Chalcogenide Semiconductors.

Transition metals doped CuAlSe2 for promising intermediate band materials

Half-filled Intermediate Bands in Doped Inorganic Perovskites for Solar Cells.

Cu2Zn(Sn,Ge)Se4and Cu2Zn(Sn,Si)Se

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

First-principles Study on the Alkali Chalcogenide Secondary Compounds in Cu(In,Ga)Se-2 and Cu2ZnSn(S,Se)(4) Thin Film Solar Cells

Predicting copper gallium diselenide and band structure engineering through order-disordered transition

Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells

Homogroup Bi/Sb Lattice Substitution to Enhance the Photoelectric Properties of Sb2Se3 Crystals

Growth of (Ag,Cu)(In,Ga)Se2 Absorbers under Band Gap Variation and Characterization with a Focus on Optical Spectroscopy

Homogroup Bi/Sb Lattice Substitution to Enhance the Photoelectric Properties of Sb<sub>2</sub>Se<sub>3</sub> Crystals

Silver-assisted Optimization of Band Gap Gradient Structure of Cu(In,Ga)Se2 Solar Cells Via SCAPS

Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response

First-principles Study On The Electronic And Optical Properties Of Cubic ABX3 Halide Perovskites

Screening Mixed-Metal Sn$_2$M(III)Ch$_2$X$_3$ Chalcohalides for Photovoltaic Applications

Gradient bandgap modification for highly efficient carrier transport in antimony sulfide-selenide tandem solar cells

Fabrication of In-Situ Ti-doped CuGaS2 Thin Films for Intermediate Band Solar Cell Applications by Sputtering with CuGaS2:Ti Targets

Chemically tuned intermediate band states in atomically thin Cu x GeSe/SnS quantum material for photovoltaic applications

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy