Abstract:Chalcopyrite copper-indium-gallium diselenides (CIGS) have emerged as promising materials with remarkable electronic properties and potential applicability to high-efficiency solar cells. The crystal and electronic structures of CIGS can be continuously tuned from their initial states under pressure. Although pressure-induced band gap closure in CIGS has been predicted in extensive theoretical studies, it has not been supported by experimental evidence. Here, we comprehensively investigate the pressure-dependent optical, electronic, and structural properties of Cu(In0.7Ga0.3)Se2 up to 42.6 GPa. Our experimental results reveal an irreversible electronic transition from the semiconducting to the metallic state at 14.3 GPa. Under compression, the Cu(In0.7Ga0.3)Se2 structure evolves from a tetragonal I4̅2d phase to an orthorhombic Pna21 phase, which has not been previously reported in chalcopyrite. More intriguingly, the Pna21 phase is irreversible and possesses smaller Cu-Se and In/Ga-Se bond lengths and a smaller Cu-Se-Cu bond angle than the I4̅2d phase. Density functional theory calculations indicate a lower enthalpy of the Pna21 phase than that of the I4̅2d phase at pressures above 10.6 GPa. Meanwhile, density of states calculations illustrate that metallization arises from the overlap of the Se p and Cu d orbitals as the bond length reduces. This pressure-induced behavior could facilitate the development of novel devices with various phenomena involving strong coupling of the mechanical, electrical, and optical properties of chalcopyrite.

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Band Gap Tailoring and Structure-Composition Relationship within the Alloyed Semiconductor Cu2BaGe1–xSnxSe4

Pressure-Induced Irreversible Metallization Accompanying Phase Transition of Chalcopyrite Cu(In0.7Ga0.3)Se2

Electronic Structures and Optical Properties of Cu-based Semiconductors with Chalcopyrite-type Structure

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Cu-Zn Disorder in Stoichiometric and Non-Stoichiometric Cu2ZnSnS4/Cu2ZnSnSe4

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