The Substrate Influence on the Optoelectronic Properties of 2D Materials

Linjun Li,Bo Liu,Weijie Zhao,Goki Eda,Kian Ping Loh

DOI: https://doi.org/10.1364/cleopr.2018.th4g.6

2018-01-01

Abstract:2D materials are known for their highly susceptible to environmental influence. Here we show the influence of different substrates to the exciton/trion related bandgap engineering of two typical materials, MoS 2 and WS 2 nanosheets.

What problem does this paper attempt to address?

Substrate induced changes in atomically thin 2-dimensional semiconductors: Fundamentals, engineering, and applications

Yinghui Sun,Rongming Wang,Kai Liu

DOI: https://doi.org/10.1063/1.4974072

IF: 15

2017-03-01

Applied Physics Reviews

Abstract:Substrate has great influences on materials syntheses, properties, and applications. The influences are particularly crucial for atomically thin 2-dimensional (2D) semiconductors. Their thicknesses are less than 1 nm; however, the lateral sizes can reach up to several inches or more. Therefore, these materials must be placed onto a variety of substrates before subsequent post-processing techniques for final electronic or optoelectronic devices. Recent studies reveal that substrates have been employed as ways to modulate the optical, electrical, mechanical, and chemical properties of 2D semiconductors. In this review, we summarize recent progress upon the effects of substrates on properties of 2D semiconductors, mostly focused on 2D transition metal dichalcogenides, through viewpoints of both fundamental physics and device applications. First, we discuss various effects of substrates, including interface strain, charge transfer, dielectric screening, and optical interference. Second, we show the modulation of 2D semiconductors by substrate engineering, including novel substrates (patterned substrates, 2D-material substrates, etc.) and active substrates (phase transition materials, ferroelectric materials, flexible substrates, etc.). Last, we present prospectives and challenges in this research field. This review provides a comprehensive understanding of the substrate effects, and may inspire new ideas of novel 2D devices based on substrate engineering.

physics, applied
Substrate Effect on Excitonic Shift and Radiative Lifetime of Two-Dimensional Materials

Chunhao Guo,Junqing Xu,Yuan Ping

DOI: https://doi.org/10.1088/1361-648X/abeacf

2021-03-24

Abstract:Substrates have strong effects on optoelectronic properties of two-dimensional (2D) materials, which have emerged as promising platforms for exotic physical phenomena and outstanding applications. To reliably interpret experimental results and predict such effects at 2D interfaces, theoretical methods accurately describing electron correlation and electron-hole interaction such as first-principles many-body perturbation theory are necessary. In our previous work [Phys. Rev. B 102, 205113(2020)], we developed the reciprocal-space linear interpolation method that can take into account the effects of substrate screening for arbitrarily lattice-mismatched interfaces at the GW level of approximation. In this work, we apply this method to examine the substrate effect on excitonic excitation and recombination of 2D materials by solving the Bethe-Salpeter equation. We predict the nonrigid shift of 1s and 2s excitonic peaks due to substrate screening, in excellent agreements with experiments. We then reveal its underlying physical mechanism through 2D hydrogen model and the linear relation between quasiparticle gaps and exciton binding energies when varying the substrate screening. At the end, we calculate the exciton radiative lifetime of monolayer hexagonal boron nitride with various substrates at zero and room temperature, as well as the one of WS2 where we obtain good agreement with experimental lifetime. Our work answers important questions of substrate effects on excitonic properties of 2D interfaces.

Materials Science,Mesoscale and Nanoscale Physics
Substrate-aware computational design of two-dimensional materials

Arslan Mazitov,Ivan Kruglov,Alexey V. Yanilkin,Aleksey V. Arsenin,Valentyn S. Volkov,Dmitry G. Kvashnin,Artem R. Oganov,Kostya S. Novoselov

2024-08-16

Abstract:Two-dimensional materials have attracted considerable attention due to their remarkable electronic, mechanical and optical properties, making them prime candidates for next-generation electronic and optoelectronic applications. Despite their widespread use in combination with substrates in practical applications, including the fabrication process and final device assembly, computational studies often neglect the effects of substrate interactions for simplicity. This study presents a novel method for predicting the atomic structure of 2D materials on arbitrary substrates by combining an evolutionary algorithm, a lattice-matching technique, an automated machine learning interatomic potentials training protocol, and the ab initio thermodynamics approach for predicting the possible conditions of experimental synthesis of the predicted 2D structures. Using the Mo-S system on a c-cut sapphire substrate as a case study, we reveal several new stable and metastable structures, including previously known 1H-MoS2 and newly found Pmma Mo3S2, P-1 Mo2S, P21m Mo5S3, and P4mm Mo4S, where the Mo4S structure is specifically stabilized by interaction with the substrate. Electronic band structure calculations of Mo3S2, Mo2S, Mo5S3, and Mo4S showed their metallic behavior, while phonon properties calculations indicated their dynamic stability and substrate-induced modulation of the phonon density of states. Finally, we use the ab initio thermodynamics approach to predict the synthesis conditions of the discovered structures in the parameter space of the commonly used CVD technique. These results provide insights into computational substrate engineering, allowing one to study the substrate effect on the thermodynamic and dynamical stability of 2D materials and to modulate their electronic and phonon properties for their future applications, as well as to provide guide maps for their experimental synthesis.

Materials Science
Substrate Dependent Synergistic Many-Body Effects in Atomically Thin Two Dimensional WS$_2$

Shreyasi Das,Rup K. Chowdhury,Debjani Karmakar,Soumen Das,Samit K. Ray

DOI: https://doi.org/10.48550/arXiv.2110.05272

2021-10-07

Abstract:Mott transition has been realized in atomically thin monolayer (ML) of two dimensional semiconductors (WS$_2$) via optically excited carriers above a critical carrier density through many body interactions. The above nonlinear optical transition occurs when excited electron hole pairs in ML WS2 continuum heavily interact with each other followed by transformation into a collective electron hole plasma phase (EHP), by losing their identity as individual quasiparticles. This is manifested by the alluring red-shift-blue-shift crossover (RBC) phenomena of the excitonic peaks in the emission spectra, resulting from the synergistic attraction-repulsion processes at the Mott-transition point. A systematic investigation of many-body effects is reported on ML WS$_2$, while considering the modulated dielectric screening of three different substrates, viz., silicon dioxide, sapphire, and gold. Substrate doping effects on ML WS$_2$ are discussed using the Raman fingerprints and PL spectral weight, which are further corroborated using theoretical DFT calculations. Further the substrate dependent excitonic Bohr radius of ML WS$_2$ is extracted via modelling the emission energy shift with Lennard-Jones potential. The variation of Mott point as well as excitonic Bohr radius is explained via substrate induced dielectric screening effect for both the dielectric substrates, which is however absent in ML WS$_2$ on Au. Our study therefore reveals diverse many-body ramifications in 2D semiconductors and offers decisive outlooks on selecting the impeccable substrate materials for innovative device engineering.

Materials Science,Mesoscale and Nanoscale Physics
Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature

Jorik van de Groep,Qitong Li,Jung-Hwan Song,Pieter G. Kik,Mark L. Brongersma

DOI: https://doi.org/10.1515/nanoph-2023-0193

2022-10-05

Abstract:Exciton resonances in monolayer transition-metal dichalcogenides (TMDs) provide exceptionally strong light-matter interaction at room temperature. Their spectral line shape is critical in the design of a myriad of optoelectronic devices, ranging from solar cells to quantum information processing. However, disorder resulting from static inhomogeneities and dynamical fluctuations can significantly impact the line shape. Many recent works experimentally evaluate the optical properties of TMD monolayers placed on a substrate and the line shape is typically linked directly to the material's quality. Here, we highlight that the interference of the substrate and TMD reflections can strongly influence the line shape. We further show how basic, room-temperature reflection measurement allow investigation of the quantum mechanical exciton dynamics by systematically controlling the substrate reflection with index-matching oils. By removing the substrate contribution with a properly chosen oil, we can extract the excitonic decay rates including the quantum mechanical dephasing rate. The results provide valuable guidance for the engineering of exciton line shapes in layered nanophotonic systems.

Mesoscale and Nanoscale Physics
Substrate-Induced Graphene Chemistry for 2d Superlattices with Tunable Periodicities

Lin Zhou,Lei Liao,Jinying Wang,Jingwen Yu,Denghua Li,Qin Xie,Zhirong Liu,Yanlian Yang,Xuefeng Guo,Zhongfan Liu

DOI: https://doi.org/10.1002/adma.201505360

IF: 29.4

2015-01-01

Advanced Materials

Abstract:2D graphene superlattices are fabricated down to the nanometer scale by a universal substrate-engineering approach, based on substrate-induced site-selective chemical reactions on the graphene basal plane. Various 2D graphene superlattices with tunable periodicities and chemical functionalities are made by using SiO2 nanosphere assemblies and other nanostructured substrates.
Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2

Kyle T Munson,Riccardo Torsi,Shreya Mathela,Maxwell A Feidler,Yu-Chuan Lin,Joshua A Robinson,John B Asbury

DOI: https://doi.org/10.1021/acs.jpclett.4c01578

2024-08-08

Abstract:Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.
Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Jingzhi Shang,Chunxiao Cong,Xiaonan Shen,Weihuang Yang,Chenji Zou,Namphung Peimyoo,Bingchen Cao,Mustafa Eginligil,Wei Lin,Wei Huang,Ting Yu

DOI: https://doi.org/10.1103/physrevmaterials.1.074001

IF: 3.98

2017-01-01

Physical Review Materials

Abstract:Owing to unique electronic, excitonic, and valleytronic properties, atomically thin transition metal dichalco-genides are becoming a promising two-dimensional (2D) semiconductor system for diverse electronic and optoelectronic applications. In an ideal 2D semiconductor, efficient carrier transport is very difficult because of lacking free charge carriers. Doping is necessary for electrically driven device applications based on such 2D semiconductors, which requires investigation of electronic structure changes induced by dopants. Therefore probing correlations between localized electronic states and doping is important. Here, we address the electronic nature of broad bound exciton bands and their origins in exfoliated monolayer (1L) WS2 and MoS2 through monitoring low-temperature photoluminescence and manipulating electrostatic doping. The dominant bound excitons in 1L WS2 vary from donor to acceptor bound excitons with the switching from n- to p-type doping. In 1L MoS2, two localized emission bands appear which are assigned to neutral and ionized donor bound excitons, respectively. The deep donor and acceptor states play critical roles in the observed bound exciton bands, indicating the presence of strongly localized excitons in such 2D semiconductors.
Substrate effects on charged defects in two-dimensional materials

Dan Wang,Ravishankar Sundararaman

DOI: https://doi.org/10.1103/physrevmaterials.3.083803

IF: 3.98

2019-08-28

Physical Review Materials

Abstract:Two-dimensional (2D) materials are strongly affected by the dielectric environment, including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluations of charged defect energetics in 2D materials typically do not include substrates due to the high computational cost. We present a general continuum model approach to incorporate substrate effects directly in density-functional theory calculations of charged defects in the 2D material alone. We show that this technique accurately predicts charge defect energies compared to much more expensive explicit substrate calculations, but with the computational expediency of calculating defects in freestanding 2D materials. Using this technique, we rapidly predict the substantial modification of charge transition levels of two defects in MoS2 and ten defects promising for quantum technologies in hBN, due to SiO2 and diamond substrates. This establishes a foundation for high-throughput computational screening of new quantum defects in 2D materials that critically accounts for substrate effects.

materials science, multidisciplinary
Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

J. Klein,A. Kerelsky,M. Lorke,M. Florian,F. Sigger,J. Kiemle,M. C. Reuter,T. Taniguchi,K. Watanabe,J. J. Finley,A. Pasupathy,A. W. Holleitner,F. M. Ross,U. Wurstbauer

DOI: https://doi.org/10.48550/arXiv.1905.01242

2019-05-04

Abstract:Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems.

Materials Science
Optoelectronics based on 2D TMDs and heterostructures

Nengjie Huo,Yujue Yang,Jingbo Li

DOI: https://doi.org/10.1088/1674-4926/38/3/031002

2017-03-01

Journal of Semiconductors

Abstract:2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

physics, condensed matter
Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

Samuel Aldana,Lulin Wang,Ion Alin Spiridon,Hongzhou Zhang

DOI: https://doi.org/10.1002/admi.202400209

IF: 5.4

2024-05-13

Advanced Materials Interfaces

Abstract:The study of MoS2 crystal growth on distinct substrates by means of kinetic Monte Carlo simulations and varying key parameters such as adsorption rate, the energy barriers for adatom desorption, on‐substrate adatom migration, or edge migration. Provides insights into the potential and limitations of these former processes, offering a theoretical framework for decision‐making in the design and optimization of transition metal dichalcogenides synthesis. Controlling the morphology of 2D transition metal dichalcogenides (TMDs) plays a key role in their applications. Although chemical vapor deposition can achieve wafer‐scale growth of 2D TMDs, a comprehensive theoretical framework for effective growth optimization is lacking. Atomistic modeling methods offer a promising approach to delve into the intricate dynamics underlying the growth. In this study, kinetic Monte Carlo (kMC) simulations are employed to identify crucial parameters that govern the morphology of MoS2 flakes grown on diverse substrates. The simulations reveal that large adsorption rates significantly enhance growth speed, which however necessitates rapid edge migration to achieve compact triangles. Substrate etching can tune the adsorption–desorption process of adatoms and enable preferential growth within a specific substrate region, controlling the flake morphology. This study unravels the complex dynamics governing 2D TMD morphology, offering a theoretical framework for decision‐making in the design and optimization of TMD synthesis processes.

materials science, multidisciplinary,chemistry
The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

Michele Buscema,Gary A. Steele,Herre S.J. van der Zant,Andres Castellanos-Gomez

DOI: https://doi.org/10.48550/arXiv.1311.3869

2013-11-15

Abstract:We quantitatively study the Raman and photoluminescence (PL) emission from single layer molybdenum disulfide (MoS2) on dielectric (SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film) and conducting substrates (Au and few-layer graphene). We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the A1g Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoS2-based vertical heterostructures and represent the first step in ad-hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

Materials Science,Mesoscale and Nanoscale Physics
Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach

Samuel Aldana,Ion Spiridon,Lulin Wang,Hongzhou Zhang

DOI: https://doi.org/10.1002/admi.202400209

2024-01-03

Abstract:Controlling the morphology of two-dimensional (2D) transition metal dichalcogenides (TMDs) plays a key role in their applications. Although chemical vapor deposition can achieve wafer-scale growth of 2D TMDs, a comprehensive theoretical framework for effective growth optimization is lacking. Atomistic modeling methods offer a promising approach to delve into the intricate dynamics underlying the growth. In this study, we employ kinetic Monte Carlo (kMC) simulations to identify crucial parameters that govern the morphology of MoS2 flakes grown on diverse substrates. Our simulations reveal that large adsorption rates significantly enhance growth speed, which however necessitates rapid edge migration to achieve compact triangles. Substrate etching can tune the adsorption-desorption process of adatoms and enable preferential growth within a specific substrate region, controlling the flake morphology. This study unravels the complex dynamics governing 2D TMD morphology, offering a theoretical framework for decision-making in the design and optimization of TMD synthesis processes.

Materials Science,Computational Physics
Substrate‐induced strain upshot on the optical and optoelectronic properties of trilayer MoS2

Sourav Mondal,Durga Basak

DOI: https://doi.org/10.1002/cphc.202400829

IF: 3.52

2024-11-23

ChemPhysChem

Abstract:The characteristics of 2D layered MoS2 film are highly dependent on the substrate it is grown on which leaves us privileged to achieve unique and tunable properties. In this study, trilayer MoS2 films have been grown on fused quartz, crystalline quartz (z‐cut), sapphire (0001), and silicon (100) substrates. MoS2 film grows as freestanding on amorphous fused quartz, while it experiences an in‐plane tensile strain on the sapphire and silicon. Unprecedentedly we show that due to a large mismatch in the lattice parameter as well as in the thermal expansion coefficient, MoS2 grows with a significant compressive strain both along both in‐plane on the crystalline quartz. The developed strain causes an alteration in its electronic structure, causing a 30 meV blue shift in the photoluminescence peak and an increased band gap in addition to fewer sulphur vacancies. Comparatively, the film on sapphire having tensile strain along the in‐plane exhibits more sulphur vacancies increasing the electron density. The photoresponse time, photosensitivity, and charge separation distinctly vary for the MoS2 films depending on the substrates. This study underscores the influence of substrate on MoS2 film opening further research scopes on tunable properties owing to 2D layer‐substrate interactions.

chemistry, physical,physics, atomic, molecular & chemical
Influence of substrate placement on synthesis of two-dimensional MoS2

Jianjiang ZHAO,Hongfei LI,Shuang XIE,Mingsheng XU

DOI: https://doi.org/10.3969/j.issn.1001-9731.2017.12.034

2017-01-01

Abstract:Due to their unique mechanical,optical and electrical properties,two-dimensional (2D)layered mate-rials such as graphene and transitional metal dichalcogenides (TMDs)have been gaining strong interests and they have great potentials for applications in flexible devices.However,the controllable synthesis is the prereq-uisite for their applications.Here,2D MoS2 was synthesized by chemical vapor deposition (CVD)method.In this study,the influence of substrate placement on the synthesis of 2D MoS2 was investigated.The results show that under the same experimental conditions,the 2D MoS2 prepared by the substrate placement of face-up and face-down have different shapes and coverage rates.Despite these,the structure and the photoluminescence properties of the monolayer MoS2 achieved by different placements of the substrate are identical.The results would be helpful to design the procedures for controllable synthesis of TMDs.
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Weijie Zhao,Zohreh Ghorannevis,Leiqiang Chua,Minglin Toh,Christian Kloc,Ping-Heng Tan,Goki Eda

DOI: https://doi.org/10.48550/arXiv.1212.5415

2012-12-21

Materials Science

Abstract:Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opportunities for the optoelectronic applications of the material. Here we report differential reflectance and photoluminescence (PL) spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect to direct transition when thinned to a single monolayer. Strong enhancement in PL quantum yield is observed for monoayer WS2 and WSe2 due to exciton recombination at the direct band edge. In contrast to natural MoS2 crystals extensively used in recent studies, few-layer WS2 and WSe2 show comparatively strong indirect gap emission along with distinct direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.
Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates.

Yuanyuan Li,Zeming Qi,Miao Liu,Yuyin Wang,Xuerui Cheng,Guobin Zhang,Liusi Sheng

DOI: https://doi.org/10.1039/c4nr04602a

IF: 6.7

2014-01-01

Nanoscale

Abstract:In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical properties of the atomically thin-film are influenced by the interaction between the thin-film and the substrate. In this article, utilizing monolayer MoS2 on LaAlO3 and SrTiO3 substrates, as well as SiO2 and Gel-film as reference substrates similar to previously reported work [Nano Res, 2014, 7, 561], we systematically investigate the substrate effect on the photoluminescence of monolayer MoS2. We observed significantly substrate-dependant photoluminescence of monolayer MoS2, originating from substrate-to-film charge transfer. We found that SiO2 substrate introduces the most charge doping while SrTiO3 introduces less charge transfer. Through the selection of desired substrate, we are able to induce different amounts of charge into the monolayer MoS2, which consequently modifies the neutral exciton and charged exciton (trion) emissions. Finally, we proposed a band-diagram model to elucidate the relation between charge transfer and the substrate Fermi level and work function. Our work demonstrates that the substrate charge transfer exerts a strong influence on the monolayer MoS2 photoluminescence property, which should be considered during device design and application. The work also provides a possible route to modify the thin-film photoluminescence property via substrate engineering for future device design.
Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

Yimin Sun

DOI: https://doi.org/10.1007/s00894-024-05913-4

IF: 2.172

2024-03-29

Journal of Molecular Modeling

Abstract:This study investigates the dynamic stability of monolayers MoS 2 , WS 2 , and MoS 2 /WS 2 van der Waals heterostructures (vdWHs) and the influence of shear strain on their electronic properties. The computational results of the binding energy and phonon dispersion demonstrate the excellent dynamic stability of MoS 2 /WS 2 vdWHs. The MoS 2 /WS 2 vdWH, with a type-II band alignment and an indirect bandgap, reduces electron–hole recombination, enhancing the efficiency and performance of optoelectronic devices. Under shear strain, the bandgap size and type of monolayers MoS 2 , WS 2 , and MoS 2 /WS 2 vdWHs were effectively modulated, along with the interlayer charge redistribution in the MoS 2 /WS 2 vdWHs. This work reveals the tunability of the electronic properties of monolayers MoS 2 , WS 2 , and MoS 2 /WS 2 vdWHs under shear strain, offering new possibilities and solutions for developing optoelectronic devices, sensors, and related fields.

chemistry, multidisciplinary,biochemistry & molecular biology,biophysics,computer science, interdisciplinary applications
Substrate-supported triplet superconductivity in Dirac semimetals

Domenico Di Sante,Xianxin Wu,Mario Fink,Werner Hanke,Ronny Thomale

DOI: https://doi.org/10.1103/PhysRevB.99.201106

2018-09-11

Abstract:Stimulated by the success of graphene and its emerging Dirac physics, the quest for versatile and tunable electronic properties in atomically thin systems has led to the discovery of various chemical classes of 2D compounds. In particular, honeycomb lattices of group-IV elements, such as silicene and germanene, have been found experimentally. Whether it is a necessity of synthesis or a desired feature for application purposes, most 2D materials demand a supporting substrate. In this work, we highlight the constructive impact of substrates to enable the realization of exotic electronic quantum states of matter, where the buckling emerges as the decisive material parameter adjustable by the substrate. At the example of germanene deposited on MoS$_2$, we find that the coupling between the monolayer and the substrate, together with the buckled hexagonal geometry, conspire to provide a highly suited scenario for unconventional triplet superconductivity upon adatom-assisted doping.

Superconductivity

The Substrate Influence on the Optoelectronic Properties of 2D Materials

Substrate induced changes in atomically thin 2-dimensional semiconductors: Fundamentals, engineering, and applications

Substrate Effect on Excitonic Shift and Radiative Lifetime of Two-Dimensional Materials

Substrate-aware computational design of two-dimensional materials

Substrate Dependent Synergistic Many-Body Effects in Atomically Thin Two Dimensional WS$_2$

Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature

Substrate-Induced Graphene Chemistry for 2d Superlattices with Tunable Periodicities

Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Substrate effects on charged defects in two-dimensional materials

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Optoelectronics based on 2D TMDs and heterostructures

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2

Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach

Substrate‐induced strain upshot on the optical and optoelectronic properties of trilayer MoS2

Influence of substrate placement on synthesis of two-dimensional MoS2

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates.

Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

Substrate-supported triplet superconductivity in Dirac semimetals