Research on Residual Gas Adsorption on Surface of InGaAs Photocathode

Jing Guo,Mingzhu Yang,Jing Zhao,Jiacai Huan,Li Long
DOI: https://doi.org/10.1016/j.ijleo.2018.11.039
IF: 3.1
2019-01-01
Optik
Abstract:The negative electron affinity InGaAs photocathode is an important part of the infrared vacuum detector. The article focuses on the adsorption of residual gas in the preparation of InGaAs photocathodes. The impact of the adsorbates on the generation of negative electron affinity was calculated and discussed. Models of InGaAs surface with residual gas were built and the work function, charge transfer, dipole and the formation energy have been analyzed based on the first principles. The dipole from the surface to the residual gas molecule was generated by the charge transfer. The surface work function went up followed. The biggest increment came up to 0.410 eV, which is caused by the adsorption of CO2. The photoelectrons escape was restrained. As a result, three chemical cleaning methods were proposed to clean the InGaAs surface. It is found that oxide is more stable to be wiped off than the other residual gas molecule. So a further treatment needs to be raised.
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