Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

Magnetic Configurations and State Diagram of Nanoring Magnetic Tunnel Junctions

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization

Novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Phase-field Simulation of Magnetic Double-Hole Nanoring and Its Application in Random Storage

Thermally nucleated magnetic reversal in CoFeB/MgO nanodots

Strain-mediated Electric Manipulation of Magnetic Skyrmion and Other Topological States in Geometric Confined Nanodiscs

Perpendicular magnetic tunnel junctions with multi-interface free layer

An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating

Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

Dipole-coupled core-shell perpendicular-shape-anisotropy magnetic tunnel junction with enhanced write speed and reduced crosstalk