Abstract:SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd(0.03)Te exhibit ZT values of ~0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd(0.03)Te with no effect on the power factor. We report that SnCd(0.03)Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ~1.3 and ~1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation.

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Manipulation of Solubility and Interstitial Defects for Improving Thermoelectric SnTe Alloys

Band and Scattering Tuning for High Performance Thermoelectric Sn1−xMnxTe Alloys

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Promoting SnTe As an Eco‐Friendly Solution for P‐pbte Thermoelectric Via Band Convergence and Interstitial Defects

Advancing thermoelectrics by vacancy engineering and band manipulation in Sb-doped SnTe–CdTe alloys

Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Solute Manipulation Enabled Band and Defect Engineering for Thermoelectric Enhancements of SnTe

Maximization of Transporting Bands for High-Performance SnTe Alloy Thermoelectrics

Extraordinary Role of Bi for Improving Thermoelectrics in Low-Solubility SnTe-CdTe Alloys.

Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach

Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Enhancing Thermoelectric Performance of SnTe Via Stepwisely Optimizing Electrical and Thermal Transport Properties

Valence Band Modification and High Thermoelectric Performance in SnTe Heavily Alloyed with MnTe.

Band and microstructure engineering toward high thermoelectric performance in SnTe

Band Inversion Induced Multiple Electronic Valleys for High Thermoelectric Performance of SnTe with Strong Lattice Softening

Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe

Low Lattice Thermal Conductivity by Alloying SnTe with AgSbTe2 and CaTe/MnTe

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

Synergistic Band Convergence and Endotaxial Nanostructuring: Achieving Ultralow Lattice Thermal Conductivity and High Figure of Merit in Eco-Friendly SnTe