Abstract:Although RRAM‐based TCAM offers the advantage of reduced cell area, its constrained sensing margin can notably impede parallel data search functionality. This study demonstrates that incorporating nanocavity arrays into CBRAM technology using AAO nanotemplate and integrating with 180 nm CMOS FETs in 2T2R configuration can significantly enhance the sensing margin characteristics favorable for TCAM applications. The development of data‐intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory‐centric paradigm. Within this context, ternary content‐addressable memory (TCAM) can become an essential platform for high‐speed in‐memory matching applications of large data vectors. Compared to traditional static random‐access memory (SRAM) designs, TCAM technology using non‐volatile resistive memories (RRAMs) in two‐transistor‐two‐resistor (2T2R) configurations presents a cost‐efficient alternative. However, the limited sensing margin between the match and mismatch states in RRAM structures hinders the potential of using memory‐based TCAMs for large‐scale architectures. Therefore, this study proposes a practical device engineering method to improve the switching response of conductive‐bridge memories (CBRAMs) integrated with existing complementary metal‐oxide‐semiconductor (CMOS) transistor technology. Importantly, this work demonstrates a significant improvement in memory window reaching 1.87 × 107 by incorporating nanocavity arrays and modifying electrode geometry. Consequently, TCAM cells using nanocavity‐enhanced CBRAM devices can exhibit a considerable increase in resistance ratio up to 6.17 × 105, thereby closely approximating the sensing metrics observed in SRAM‐based TCAMs. The improved sensing capability facilitates the parallel querying of extensive data sets. TCAM array simulations using experimentally verified device models indicate a substantial sensing margin of 65× enabling a parallel search of 2048 bits.

Non-Volatile Ternary Content Addressable Memory (TCAM) with Two HfO2/Al2O3/GeOx/Ge MOS Diodes

8F2 Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-diodes with 2 × 105 Self-rectifying Ratio

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning

Ge-Based Asymmetric RRAM Enable 8F(2) Content Addressable Memory

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory

CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors

Energy-efficient Ternary Content Addressable Memory Using Ferroelectric FET