Electronic and Optical Properties of Alpha-Moo3/tio2 Heterostructures: A DFT Study

Qiangqiang Meng,Lele Fan,Lei Zhu,Ning Xu,Qinfang Zhang
DOI: https://doi.org/10.1002/qua.25681
2018-01-01
International Journal of Quantum Chemistry
Abstract:The coupling of metal oxide semiconductors has become an effective method to improve the separation of photon-generated carriers and light absorption efficiency. In this study, we explored electronic and optical properties of monolayer and bilayer alpha-MoO3 on TiO2 (001) surface. It is observed that alpha-MoO3/TiO2 heterostructures can form a stable Mo-O-Ti bonding mode at the interface. Electrons transfer from TiO2 (001) surface to the alpha-MoO3, leading to the enhancement of the valence band and the optical absorption spectrum in visible light region. In addition, this proper charge transfer generates a built-in electric field between the interface regions of bilayer alpha-MoO3/TiO2 heterostructure and forms a favorable type-II band alignment between the two alpha-MoO3 layers. The alpha-MoO3/TiO2 heterostructure can prevent the recombination of the electron-hole pairs; thus, excite electrons can easily move from TiO2 to the inner layer, and then to the outer layer of alpha-MoO3. These results demonstrate that the bilayer alpha-MoO3/TiO2 heterostructure, especially the outer layer alpha-MoO3, has efficient photoelectric performance.
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