Tendency of Gap Opening in Semimetal 1T′‐MoTe 2 with Proximity to a 3D Topological Insulator
Cheng Zhang,Wei Liu,Fangyang Zhan,Teng Zhang,Liwei Liu,Min Zhang,Sen Xie,Ziwei Li,Hao Sang,Haoran Ge,Yonggao Yan,Rui Wang,Yeliang Wang,Qingjie Zhang,Xinfeng Tang
DOI: https://doi.org/10.1002/adfm.202103384
IF: 19
2021-06-20
Advanced Functional Materials
Abstract:<p>Monolayer (ML) 1T′-MoTe<sub>2</sub> has attracted intensive interest as a fascinating quantum spin Hall (QSH) insulator. However, there are two critical aspects impeding its exploration and potential applications of QSH effects. One is its semimetallic feature with a negative band gap, leading to nontrivial edge channels annihilated by the bulk states. The other is its fabrication always accompanied by a mixed phase of 1T′ and 2H. Based on first-principles calculations, it is shown that the large work-function difference results in strong interlayer interactions and proximity effects in ML 1T′-MoTe<sub>2</sub> via interfacing a 3D topological insulator Bi<sub>2</sub>Te<sub>3</sub>, facilitating the realization of pure 1T′ phase and even the band gap opening. It is further verified that the epi-grown ML 1T′-MoTe<sub>2</sub> on Bi<sub>2</sub>Te<sub>3</sub> is nearly in single phase. Furthermore, the measurements of angle resolved photoemission spectroscopy and scanning tunneling spectroscopy confirm the obvious separated-tendency of conduction and valence bands as well as the strong metallic edge states in ML 1T′-MoTe<sub>2</sub>. The results also reveal the nontrivial band topology in ML 1T′-MoTe<sub>2</sub> is preserved in 1T′-MoTe<sub>2</sub>/Bi<sub>2</sub>Te<sub>3</sub> heterostructure. This work offers a promising candidate to realize QSH effects and provides guidance for controlling the nontrivial band gap opening by proximity effects in van der Waals engineering.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology