High‐Q and temperature‐stable microwave dielectrics in layer cofired Zn1.01Nb2O6/TiO2/Zn1.01Nb2O6 ceramic architectures

Jie Zhang,Yu Luo,Zhenxing Yue,Longtu Li
DOI: https://doi.org/10.1111/jace.15924
IF: 4.186
2019-01-01
Journal of the American Ceramic Society
Abstract:A multilayer cofired architecture was proposed and demonstrated to achieve high-Q and temperature-stable microwave dielectrics in a derived system, Zn1.01Nb2O6TiO2. This approach could effectively allow the chemical reactions between Zn1.01Nb2O6 and TiO2 occur at a rather narrow area (similar to 12 mu m), the interfaces of heterogeneous layers, where the diffusion of Zn, Nb, and Ti could be observed. Such interfaces could act as the in situ "glues" to connect each layer well. The effects of stacking scheme and TiO2 content on the microwave dielectric properties of layered architectures were investigated systematically. The resonant frequency, Q-factor, and electric field distribution were reported using the eigenmode solver of high-frequency structure simulator. Among the available layer architectures, the optimized microwave dielectric characteristic was observed in Zn1.01Nb2O6/TiO2/Zn1.01Nb2O6 stacked with 0.058 mol TiO2 (similar to 1.84 vol%). The tau(f) can be effectively tuned to approximately +0.53 ppm/degrees C, and importantly, a high Q x f value similar to 99 500 GHz together with epsilon(r) similar to 26.8 was achieved. This design could be beneficial for opening up new ways to develop high-performance microwave dielectrics based on current material systems and therefore to meet with the high requirements for 5G wireless communication components and multilayer packing technology.
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