Abstract:Spectral purity of any millimeter wave (mmW) source is of the utmost interest in low-noise applications. Optical synthesis via photomixing is an attractive source for such mmWs, which usually involves expensive spectrally pure lasers with narrow linewidths approaching monochromaticity due to their inherent fabrication costs or specifications. Here, we report an alternative option for enhancing the spectral purity of inexpensive semiconductor diode lasers via a self-injection locking technique through corresponding Stokes waves from a fiber Brillouin cavity exhibiting greatly improved phase noise levels and large wavelength tunability of ~1.8 nm. We implement a system with two self-injected diode lasers on a common Brillouin cavity aimed at difference frequency generation in the mmW and THz region. We generate tunable sub-mmW (0.3 and 0.5 THz) waves by beating the self-injected two wavelength Stokes light on a uni-travelling carrier photodiode and characterize the noise performance. The sub-mmW features miniscule timing noise levels in the zepto-second (zs.Hz^-0.5) scale outperforming the state of the art dissipative Kerr soliton based micro-resonator setups while offering broader frequency tunability. These results suggest a viable inexpensive alternative for mmW sources aimed at low-noise applications featuring lab-scale footprints and rack-mounted portability while paving the way for chip-scale photonic integration.

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Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

1.3 Qm Tunable Quantum Dot Lasers

1.55-Μm Ultrashort Pulse InAs/InP Quantum Dot Mode-Locked Lasers with High Output Power

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

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Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Electro-optically Tunable Microwave Source Based on Composite-Cavity Microchip Laser

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Simple tunable phase-locked lasers for quantum technologies

Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

Exceeding octave tunable Terahertz waves with zepto-second level timing noise

Sub-Thz Wave Generation Based on A Dual Wavelength Microsquare Laser

Widely Tunable High-Repetition-Rate Terahertz Generation Based on an Efficient Doubly Resonant Type-II PPLN OPO

Broadband Tunable InAs/InP Quantum Dot External-Cavity Laser Emitting Around 1.55 Μm.