Oxygen-vacancy-mediated Dielectric Property in Perovskite Eu0.5Ba0.5TiO3-δ Epitaxial Thin Films

Weiwei Li,Junxing Gu,Qian He,Kelvin H. L. Zhang,Chunchang Wang,Kuijuan Jin,Yongqiang Wang,Matias Acosta,Haiyan Wang,Albina Y. Borisevich,Judith L. MacManus-Driscoll,Hao Yang
DOI: https://doi.org/10.1063/1.5025607
IF: 4
2018-01-01
Applied Physics Letters
Abstract:Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.
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