A 2.1 GHz 30 Dbm Power Amplifier in 0.18 Μm SiGe BiCMOS Process

Zhiqun Li,Shidong He,Bihui Zhu,Chi Zhang
DOI: https://doi.org/10.1002/mop.31066
IF: 1.311
2018-01-01
Microwave and Optical Technology Letters
Abstract:A cascode power amplifier (PA) fabricated in 0.18 μm SiGe BiCMOS technology is presented. The cascode structure is used to provide high voltage gain and high output power. To prevent the negative impact of bond wire, the pseudo‐differential structure is used to provide a virtual ground for signal. Adaptive bias circuit provides stable voltage bias to the base of common‐emitter. With the combination of two completely symmetrical PA units, the whole PA achieves its saturated output power of 30.62 dBm and PAE of 31.75% at 2.1 GHz, and the small signal gain is 26.19 dB.
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