The Model of the Influence of the Electron Refluxing on the Electron Transport and K Α Emission

J. C. Zhao,L. H. Cao,J. H. Zheng,Z. Q. Zhao,Z. J. Liu,C. Y. Zheng,H. Zhang,Y. Q. Gu,J. Liu

DOI: https://doi.org/10.1017/s0263034617000465

2017-01-01

Laser and Particle Beams

Abstract:In our previous research (Zhao et al., 2016), we focus on the transport processes from hot electrons to K-alpha X-ray emission in a copper foil and nanobrush target when the electron refluxing effect is not taken into account. In this work, considering the refluxing effect, the transport of hot electrons in a solid target is studied by adding the electric fields both at the front and rear surfaces of the target with Monte Carlo code Geant4. Simulation results show that the electron refluxing has an important influence on K-alpha photon yield and the size of K-alpha radiation source. K-alpha yield from the 10-mu m-thick target with the electron refluxing effect is 2.7-3.7 times more than that without the refluxing for the electron temperatures from 0.4 to 1.4 MeV. The laser-to-K-alpha photon energy conversion efficiency eta(L -> K alpha) with the refluxing effect is always higher than that without the refluxing, and both of them decrease gradually with laser strength I lambda(2). Considering the electron refluxing effect or not, the variations of K-alpha yield with the target thickness d are very different. A critical thickness of the target d(c) (similar to 30 m) is achieved to confirm whether the refluxing effect is valid for the target. For the target with the thickness d less than d(c), the refluxing effect can enhance K-alpha yield with several times, while for the target with the thickness d larger than d(c), the refluxing effect is not so effective. The full-width at half-maximum increases from 23 to 56 mu m after including the refluxing effect by the electron beam with the radius of 10 mu m and the temperature of 400 keV.