A 0.028mm<sup>2</sup> 19.8fJ/step 2<sup>nd</sup>-order VCO-based CT ΔΣ modulator using an inherent passive integrator and capacitive feedback in 40nm CMOS

Shaolan Li,Nan Sun
DOI: https://doi.org/10.23919/VLSIC.2017.8008538
2017-01-01
Abstract:This paper presents an OTA-less 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> -order VCO-based CT ΔΣ modulator featuring a passive integrator that makes use of the VCO's inherent parasitic effect. A low-power capacitive feedback technique is also presented for robust loop compensation. Fabricated in 40nm CMOS, the prototype occupies 0.028mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of active area and consumes 524μW when sampling at 330MHz. The ΔΣM achieved peak Walden FoM of 19.8fJ/step with 68.6dB SNDR over 6MHz BW.
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