Interstitial Copper Defect Induced Reconstruction of a New “cuo 4 ” Quadrilateral in CaCu 3 Ti 4 O 12 : A First-Principles Study

Haibo Xiao,Linfang Xu,Ruilong Wang,Changping Yang
DOI: https://doi.org/10.1016/j.physb.2017.06.033
2017-01-01
Abstract:The geometric structure, electronic structure and formation energy of CaCu3Ti4O12 (CCTO) with interstitial copper atom have been studied using the density-functional method within the GGA approximation. Result of structural optimization shows that the interstitial Cu-atom (Cu7) prefers to occupy a special location which is symmetrical with an intrinsic copper atom (Cu13) deviated from the normal site. The mulliken analysis indicates the loss of electrons from interstitial atom (Cu7) and Cu13 are only half more of the losing in other copper atom, which reveals a characteristics of covalent bonding between Cu7/Cu13 and surrounding oxygen atoms respectively. Meanwhile, it is found from electron density difference (EDD) and orbital analysis that the introduction of interstitial Cu atom causes prominent structural reconstruction of a new “CuO4” quadrilateral. Moreover, the new “CuO4” planar leads to a corresponding electronic reconstruction in the hybridization between Cu7/Cu13 3d and O 2p at the vicinity of fermi surface, for which a new conductive filament channel comes into being. Besides, the formation energies of the interstitial defects in various charge states are corrected with the value of 2.18, −4.17 and −9.46eV for charge of 0, 1+ and 2+, respectively.
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