Dynamical Resonant Charge Transfer of Fast C−, O−, F− Ions and Water Covered Si(111) Surface

Feifei Xiong,Lei Gao,Yuefeng Liu,Jianjie Lu,Pinyang Liu,Shunli Qiu,Xiyu Qiu,Yanling Guo,Ximeng Chen,Lin Chen
DOI: https://doi.org/10.1016/j.vacuum.2016.12.008
IF: 4
2016-01-01
Vacuum
Abstract:The experiment of 6.5-22.5 keV C-, O- and F- ions scattering on water covered Si(111) surface has been performed. It is found that the positive-ion fraction is very low and increases monotonically as a function of perpendicular exit velocity and exit angle. In particular, the negative-ion fraction increases monotonically with perpendicular exit velocity for specular scattering, and for a given incident energy the angle dependence of the fraction is nonmonotonic. We interpret the observed positive ions in terms of inelastic binary collision, and adopt a modified resonant charge transfer model to calculate the bell shaped negative-ion fraction. We find that the neutral yield at short ion-surface distance is nonzero and obeys well an exponential dependence. It strongly indicates that a dynamical equilibrium for negative ion formation is never achieved at short distances, and the band gap effect on charge transfer can be neglected to a large extent in this relatively high energy region. (C) 2016 Elsevier Ltd. All rights reserved.
What problem does this paper attempt to address?