Exciton Emission From Plasmonic-Organic-Iii-V-Semiconductor Nanowires And Nanorods

Hans Peter Wagner,Masoud Kaveh,Fatemesadat Mohammadi,Heidrun Schmitzer,Qiang Gao,Chennupati Jagadish,Gerd Kunert,Detlef Hommel,Jingxuan Ge,Gerd Duscher
DOI: https://doi.org/10.1109/PIERS.2016.7734812
2016-01-01
Abstract:We study the exciton emission from ensembles of uncoated and plasmonic gold/aluminum quinoline (Alq 3 ) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) and GaN nanorods using time-integrated (TI) as well as time resolved (TR) photoluminescence (PL). The ∼ 150nm diameter zincblende NWs were grown on GaAs substrate using the Au catalyzed vapor-liquid-solid method. The wurtzite GaN nanorods of ∼ 250nm diameter were grown by molecular beam epitaxy. Plasmonic NWs and nanorods were coated with a nominally 10nm thick gold film without or with a several nanometer thick Alq 3 interlayer by organic molecular beam deposition.
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