A ReRAM-based Physically Unclonable Function with Bit Error Rate < 0.5% after 10 Years at 125°C for 40nm Embedded Application

Y. Yoshimoto,Y. Katoh,S. Ogasahara,Z. Wei,K. Kouno
DOI: https://doi.org/10.1109/vlsit.2016.7573433
2016-01-01
Abstract:This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 10 10 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.
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