Abstract:Silicon purification with Al-Si solvent refining is a potential method to obtain solar grade silicon (SoG-Si). Hydrogen is a helpful element to enhance the removal of impurity boron during the Al-Si solvent refining. However, the interaction mechanism between hydrogen and boron is not very clear. In this paper, the ab initio calculation method, which is based on the density function theory (DFT), was adopted to further understand the interaction behavior of hydrogen and boron. The structure properties, bonding energy, energy band structure and density of states (DOS) of BH2, BH3, B2H6, SiH4 and AlH3 were calculated and analyzed using the CASTEP module in Materials Studio. The results show that BH2 has the feature of semiconductor, while BH3, B2H6, SiH4 and AlH3 belong to insulator. Additionally, the order of binding energy for hydrides from large to small is B2H6, BH3, SiH4, BH2 and AlH3, indicating that B2H6 is the most stable compounds among the hydrides. The DOS and partial density of states (PDOS) analysis show that the valence band of B2H6 contains four parts, which are contributed by H-1s and B-2s states, H-1s, B-2s and B-2p states, H-1s and B-2p states, H-1s and B-2p states, respectively. To verify the calculation results, an experiment and a thermodynamic analysis were carried out, and both of them proved that the calculation results agree well with the experimental results.

Silicon Tetrahydroborate and Silylene Dihydroborate with Interelement B–H–Si and B═Si Bonds

Intramolecular Halogen Stabilization of Silylium Ions Directs Gearing Dynamics.

Gas Phase Reactions Between Sih4 and B2h6: A Theoretical Study

Insights into the Nature of SiH4−BH3Complex: Theoretical Investigation of New Mechanistic Pathways Involving SiH3•and BH4•Radicals

Silane Activation by Laser-Ablated Be Atoms: Formation of HBeSiH 3 and HBe(μ-H) 3 Si Molecules

Structural Characterization of a Boron(III) Η2-Σ-silane-complex.

Interaction mechanism between hydrogen and boron during the Al–Si solvent refining with hydrogen assistance

Isolable Si=B Analogue of a Vinyl Halide: A Building Block for Facile Access toward Silicon-Boron Multiple Bonded Species

Ab Initio and Topological Study of Interactions Between SiH4-nXn(n= 0−3, X = F and Cl) and BH3

Infrared Spectra and Theoretical Calculations of BS2 and BS2−: Strong Pseudo Jahn-Teller Effect

Optical Second Harmonic Spectroscopy of Boron-Reconstructed Si(001)

Formation of Strong Boron Lewis Acid Sites on Silica

Reaction of a Boryl Anion with Silicon Halides and Alkoxysilanes: Synthesis of Borylsilanes

Reactions Of Amidinate-Supported Silylene With Organoboron Dihalides

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Infrared Spectra of the Novel Si2h2 and Si2h4 Species and the Sih1,2,3 Intermediates in Solid Neon, Argon, and Deuterium

High yield of a variety of silicon-boron radicals and their reactivity

Synthesis of Boryl-Substituted Disilane, Disilene, and Silyl Cation

Double And Triple Si-H-M Bridge Bonds: Matrix Infrared Spectra And Theoretical Calculations For Reaction Products Of Silane With Ti, Zr, And Hf Atoms

Hydrogen-Bridged Oligosilanylsilyl Mono- and Oligosilanylsilyl Dications

Silylidyne, HSi≡MoH3 and HSi≡WH3, and Silyl Metal Hydride, SiH3—CrH, Products in Silane Reactions